D45VH10PNP datasheet, PDF - EEWORLD Datasheet

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D45VH10PNP: DescriptionRF POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size848KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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D45VH10PNP Overview

RF POWER TRANSISTOR

D45VH10PNP Parametric

Parameter Name	Attribute value
state	ACTIVE
Transistor type	RF POWER

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, O

ne.

20 STERN AVE.

TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

(212)227-6005

FAX: (973) 376-8960

D44VH10 (NPN),

D45VH10 (PNP)

Complementary Silicon

Power Transistors

These complementary silicon power transistors are designed for

high-speed switching applications, such as switching regulator's and

high frequency inverters. The devices are also well-suited for drivers

for high power switching circuits.

Features

• Fast Switching -

tf = 90 ns i Max i

• Key Parameters Specified (a 100

• Low Collector-Emitter Saturation Voltage -

C E

(

a t ) = l - O V ( M a x i @ 8.0 A

• Complementary Pairs Simplify Circuit Designs

15A

COMPLEMENTARY SILICON

POWER TRANSISTORS

80 V, 83 W

MARKING

DIAGRAM

MAXIMUM RATINGS

Hating

Collector-Emitter Voltage

Emitter Base Voltage

Collector Current -Continuous

-Peak (Note 1 )

"otal Power Dissipation ; ~- = 25 C

Derate above 25 C

Operating and Storage Junction

"^•"oerature Range

Symbol

VCEO

VCEV

VEE

Value

Unit

Vdc

Adc

STY LEI

PIN1. BASE

2. COLLECTOR

3 [MIT'cH

4. COLLECTOR

D4xVH10G

AYWW

••:•:

7.0

TO-220AB

s:c

0.67

-55 to

150

w c

= 4 or 5

= Assemb^f Location

= Year

= Work Week

THERMAL CHARACTERISTICS

Characteristic

"hermal Resistance. Junction to Case

~ierr^al Resistance. Junction to Ambient

Maximum Lead "emperature for Soldering

Purposes: 1 .'8" from Case tor 5 Seconds

Symbol

H jo

Max

1.5

62.5

275

Unit

C A

. .'.

St'esses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Width 6.0ms, Duty Cycle 50°o.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

nonce.

Information

furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press.

However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders

Quality Semi-Conductors

D45VH10PNP Related Products

	D45VH10PNP	D44VH10	D44VH10NPN
Description	RF POWER TRANSISTOR	RF POWER TRANSISTOR	RF POWER TRANSISTOR
state	ACTIVE	-	ACTIVE
Transistor type	RF POWER	-	RF POWER

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