J.E.IIS.U ^E.ml-L.onaucko'i
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRF630,631
D84DN2,M2
9.0
AMPERES
200,150 VOLTS
"DS(ON) = 0.4 n
N-CHANNEL
FIELD EFFECT POWER TRANSISTOR
Features
• Polysilicon gate — Improved stability and reliability
• No secondary breakdown — Excellent ruggedness
• Ultra-fast switching — Independent of temperature
• Voltage controlled — High transconductance
• Low input capacitance — Reduced drive requirement
• Excellent thermal stability — Ease of paralleling
[RUT
.14613.681
.14113.581
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
CASE
TEMPERATURE
REFERENCE
POINT
UNIT
TVPE
TERM \E
TERM.2 TERM.3
3RAIN SOURCE
TAB
DRAIN
POWER MOSFET T 0 2 2 0 A B
maximum ratings (~!"c = 25° C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RQS = 1MH
Continuous Drain Current @ TQ = 25° C
@T
C
=100°C
Pulsed Drain Current
01
Gate-Source Voltage
Total Power Dissipation @ TC = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VDSS
VDGR
IRF630/D84DN2
200
200
IRF631/D84DM2
150
150
UNITS
Volts
Volts
ID
'DM
VGS
PD
TJ, TSTG
9.0
6.0
36
±20
9.0
6.0
36
±20
A
A
A
75
0.6
-55 to 150
75
0.6
-55 to 150
Volts
Watts
W/°C
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes:
Ve"
from Case for 5 Seconds
RftJC
R
9JA
1.67
80
260
1.67
80
260
°C/W
°C/W
°C
T
L
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placine orders.
Quality
Semi-Conductors
electrical Characteristics (T"c= 25° C)
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
IRF630/D84DN2
(V
G
s = 0V, I
D
= 250 //A)
IRF631/D84DM2
Zero Gate Voltage Drain Current
(V
DS
= Max Rating, VQS = 0V, T
c
= 25° C)
(VDS = Max Rating, x 0.8, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current
(V
G
s = ±20V)
BVDSS
200
150
—
—
Volts
IDSS
IGSS
—
—
—
—
250
1000
A/A
±500
nA
on characteristics'
Gate Threshold Voltage
T
C
= 25°C
VGS(TH)
2.0
—
4.0
Volts
A
(V
DS
= VGS. ID = 250
M
A)
On-State Drain Current
(V
QS
= 10V, VDS = 10V)
Static Drain-Source On-State Resistance
ID (ON)
R
DS(ON)
9.0
—
2.4
—
—
0.4
—
(V
G
s = iov, ID = S.OA)
Forward Transconductance
(V
DS
= 10V, I
D
= 5.0A)
0.34
3.0
Ohms
mhos
Qfs
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VQS = 0V
VDS = 25V
f = 1 MHz
Cj
SS
—
—
—
650
150
30
800
450
150
PF
PF
PF
c
oss
Crss
switching characteristics'
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DS
= 90V
I
D
= 5.0A, VQS = 15V
RGEN = son, R
GS
= i2.sn
(RGS(EQUIV.)=10n)
tyon)
tr
4
d(off)
tf
—
—
—
—
15
25
30
20
—
—
—
—
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(T
C
= 25°C, V
GS
= OV, I
S
= 9.0A)
Reverse Recovery Time
(l
s
= 9.0A, dls/dt = 100A///sec, T
c
= 125°C)
"Pulse Test: Pulse width < 300
/js.
duty cycle < 2%
24
60
40
is
ISM
VSD
trr
—
—
—
—
—
—
1.0
300
2.5
9.0
A
A
36.0
2.0
Volts
ns
PC
QRR
22
I
CONDITIONS:
R
DS(ON) CONDITIONS IQ = 5.0 A, VQC, = 10V
V
GS(TH) CONDITIONS: I
D
= 2KVA, V
D
"
S
= V
QS
\d
~
S
C
S
V
V
s.
AMPERES
1
ooo
±
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X"
J
S
X
,^7*^
X
X.
X^
.
s
s
s
S,
2.0
5
4
%N
"x^
^v s^
u
S
^
V
^
x^
V
10^
S
g
jEj
1
'
8
j
I
1.6
1.4
S
1 2
U
\
Xx
^
V
! ,,o
| 0.8
°.06
^OPERATION IN THIS A R E A
MAY BE LIM
\.
^
s
X
.
^
s^V
X
,™
Turns
0.8
0.6
s
0.4
0.2
0 !
»t
100ms
SI
NGLE PULSE
V2S-C
IRF630/D84DN2
:
IRF631/D84DM2-^-
|
10
20
40 6080100
200
V
Dt
,
DRAIN-SOURCE VOLTAGE
IVOLTS)
400600 1000
0
40
80
Tj. JUNCTION TEMPERATURE I"C>
MAXIMUM SAFE OPERATING AREA
TYPICAL NORMALIZED R
DSION
, AND V
QSITHI
VS. TEMP.
FPGA/CPLD
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