u
,
Li
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IFN860
Dual N-Channel Silicon Junction Field-Effect Transistor
Low-Noise Audio Amplifier
Equivalent to Crystalonics
CD860
Absolute maximum ratings at T
A
= 25°C
Reverse Gate Source & Reverse Gate Drain Voltage
- 20 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
400 mW
Power Derating
2.3 rnWfC
Storage Temperature Range
- 65°C to 200"C
At 25
C
C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Leakage Voltage
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Differential Gate Source Voltage
Dynamic Electrical Characteristics
Transconductance
Common Source Input Capacitance
Common Source Reverse Transfer
Capacitance
Equivalent Short Circuit
Input Noise Voltage
9m
Hss
V
(BR)GSS
IFN860
Process NJ450L
Mm
-20
Typ
Max
3
Unit
Test Conditions
V
nA
V
mA
25
I
G
= - 1 uA, V
DS
= 0v
V
GS
= -10V, V
DS
= 0V
IGSS
V
GS(OFF)
-0.3
-3
V
DS
= 10V, l
D
= 100uA
V
DS
= 10V, V
GS
= 0V
'DSS
I
V
GS1~
V
GS2
10
mV
V
DS
= 10V, !
D
= 1 0 0 u A
25
40
30
17
35
20
2
mS
PF
PF
nV/\Hz
V
DS
= 10V, l
D
= -10mA
f = 1 kHz
f = 1 MHz
f = 1 MHz
V
DS
= 10V, I
D
= - 10 mA
Crss
V
DS
= 10V, iD = -
1 0 m A
V
D G
-3V, I
D
= 10mA
GN
TO71
f = 1 kHz
SEATING PLANE
OJ6jQ,
.019 <
(DIM A)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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