This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Features
•
-25A, -100V
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
Ordering Information
PART NUMBER
IRF9150
PACKAGE
TO-204AE
BRAND
IRF9150
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE
NJ Semiconductors reserves the right to change test conditions, parameter limits and package dimensions without
not.ce. Intormatmn turn.shed b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of go in*
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered™™ Use
VI .Vnu4 onductors encournges customers to verify that datasheets are current before placing orders.
IRF9150
Absolute Maximum Ratings
T
c
= 25°C, Unless Otherwise Specified
. .
Drain to Source Breakdown Voltage (Note 1 )
Drain to Gate Voltage (Res ~ 20k£i) (Note 1 )
Continuous Drain Current
T
C
=100°C
Pulsed Drain Current (Note 3)
Gate to Source Voltage
Maximum Power Dissipation (Figure 1)
Linear Derating Factor
Single Pulse Avalanche Energy Rating (Note 4)
Avalanche Current (Repetitive or Nonrepetitive)
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in M.6mml from Case for 10s
Vn<;
VnrR
In
In
Vpq
Pn
....
. ..
EA<;
IRF9150
-100
-100
-25
-18
-100
+20
150
12
1300
-25
-55 to 1 50
UNITS
V
v
A
A
A
V
W
W/°C
mj
A
°C
°C
Ti
300
CAUTION: Stresses above those listed in "Absolute Max/mum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied,
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