, U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
1.8 AMPERES
200,150 VOLTS
RDS(ON) = 2.4 "
IRFF212,213
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
N-CHANNEL
RELD EFFECT POWER TRANSISTOR
Jh\s
design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate — Improved stability and reliability
• No secondary breakdown — Excellent ruggedness
• Ultra-fast switching — Independent of temperature
• Voltage controlled — High transconductance
• Low input capacitance — Reduced drive requirement
• Excellent thermal stability — Ease of paralleling
(TO-39)
DIMENSIONS ARE IN INCHcS AMD (MILLIMETERS)
1-0844)
-y.V
^~
2>r
TYPE
TO-205AF
TERM 1
TERM 2
GATE
TEflM 3
DRAIN
^
SOURCE
maximum ratings (To
=
25° C)
(unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RQS = 1Mft
Continuous Drain Current @ TC = 25
e
C
Pulsed Drain Current'
11
Gate-Source Voltage
Total Power Dissipation @ TC = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VDSS
VDGR
IRFF212
200
200
1.8
7.5
±20
IRFF213
150
150
1.8
7.5
±20
UNITS
Volts
Volts
ID
'DM
VGS
PD
TJ, TSTG
A
A
Volts
Watts
W/°C
15
.12
-55 to 150
15
.12
-55 to 150
°C
thermal characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
RftJC
RftJA
8.33
175
260
8.33
175
260
6
C/W
°C/W
°C
T
L
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical Characteristics (Tc
=
25° C)
(unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
IRFF212
(VQS = 0V. ID = 250 AiA)
IRFF213
Zero Gate Voltage Drain Current
(V
DS
= Max Rating, V
GS
= 0V, T
c
= 25°C)
(V
D
S = Max Rating, x 0.8, V
GS
= 0V, T
c
= 125°C)
Gate-Source Leakage Current
(V
G
s = ±20V)
BVDSS
200
150
—
—
Volts
IDSS
—
—
—
—
250
1000
±100
M
nA
'GSS
on characteristics*
Gate Threshold Voltage
(V
DS
= VGS. ID = 250
M
A>
On-State Drain Current
T
C
= 25°C
VQS(TH)
2.0
1.8
—
0.72
—
—
—
—
4.0
—
2.4
—
Volts
(V
GS
= iov, VDS = iov>
Static Drain-Source On-State Resistance
(V
G
s=10V.I
D
= 1.25A)
Forward Transconductance
(V
DS
=10V, I
D
=1.25A)
'D(ON)
F>DS(ON)
A
Ohms
mhos
9fs
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Cj
SS
CQSS
—
—
—
—
—
—
150
80
25
PF
PF
PF
c
rss
l
d(on)
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDS = 90V
I
D
=1.25A,V
GS
= 15V
—
—
—
—
8
15
10
8
—
—
—
—
t_r
R
GEN
= son, R
G
s = 12.50
(RGB (EQUIV.) = 10ft)
tdtoff)
tf
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
(T
C
= 25°C, V
G
S = OV, I
S
= 2.0A)
Reverse Recovery Time
(l
s
= 2.2A, dl
s
/dt = 100A/>sec, T
c
= 125° C)
'Pulse Test: Pulse width < 300 //s, duty cycle s 2%
—1
2.2
2.0
1
is
ISM
VSD
trr
—
—
—
—
—
—
—
290
2.0
1.8
7.5
1.8
—
A
A
Volts
ns
//C
QRR
CONOI1 IONS:
_
R
°
V
G
a
B
6
S(TH
)
S(ON) CONDITIONS:
CONDITIONS:
5 A
'
V
QS
= 1 0 1
D
-2K
/
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MA, Vpg = VQ S
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10
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100 ma
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1
1.2
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