C/
!j
u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS
RDS(on)
-100V
1.20
IRFF9110
ID
IRFF9110
100V, P-CHANNEL
-2.5A
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Features:
•
•
•
•
•
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
lD@VGS = -10V.Tc = 25°C
Units
-2.5
-1.6
-10
15
W
W/°C
ID@VGS = -IOV,TC = IOO°C
[DM
PD @ TC = 25°c
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current CD
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy &
Avalanche Current Ci
Repetitive Avalanche Energy 5
Peak Diode Recovery dv/dt 1;
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
A
0.12
±20
87
—
—
VGS
HAS
IAR
EAR
dv/dt
Tj
V
mJ
A
mJ
V/ns
-5.5
-55 to 150
TSTG
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRFF9110
Electrical Characteristics
@Tj = 25°C (Unless Otherwise Specified)
Parameter
BvDSS
ABVDSS/ATj
RDS(on)
VGS(th)
r\
n
v / u
9fe
IDSS
fess
tess
03
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-iuu
—
—
—
-2.0
0.8
—
Typ
-0.10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
Max
Units
—
1.2
1.38
-4.0
—
-25
-250
-100
100
9.8
1.8
4.3
30
60
40
40
Test Conditions
Reference to 25°C, ID = -1.0mA
VGS = -10V, lo = -1.6A 4,
VGS=-10V, lo = -2.5A ®
v/°c
n
V
S(t5)
uA
VDS = VGS, ID = -250uA
VDS > -15V, lDS = -1-6A '5
VDS=-80VVGS=OV
VDS = -8ov
VGS = OV,Tj = 125°C
%
Qad
td(on)
tr
tdfoffl
tf
LS + L
D
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charae
Gate-to-Drain ('Miller') Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
4.0
0.8
1.9
—
—
—
—
nA
nC
VGS = -2ov
VGS = 2ov
VGS=-10V, ID = -2.5A
VDS=-50V
VDD = -5ov ID = -2.5A,
RG=7.5£J
nH
Measured from dram lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Qss
Coss
Qss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
200
85
30
—
—
PF
VGS = OV,VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
is
ISM
VSD
kl
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 'i>
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ
—
—
—
—
—
—
—
—
—
—
Max
Units
-2.5
-10
-5.5
200
4.0
A
V
r6
MC
Test Conditions
Tj = 25°C, IS =-2.5A, VGS = 0V 8)
Tj = 25°C, IF = -2.5A, di/dt < -100A/us
VDD
^
-50V ®
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD-
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min
Typ Max
—
Units
Test Conditions
Typical socket mount
—
8.3
175
°c/w
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