ne.
,
O
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRFM9240
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
RDS(on)
IRFM9240
200V, P-CHANNEL
ID
-11A
0.51U
heaiures:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
lD@V
G
S = -10V,T
C
= 25°C
Units
-11
ID@VGS = -IOV,TC = IOO°C
[DM
P
D
@ T
C
= 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current i
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy '?
Avalanche Current CD
Repetitive Avalanche Energy CD
Peak Diode Recovery dv/dt 35
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-7.0
-44
125
1.0
±20
500
-11
.
A
W
C
V
in j
A
VGS
EAS
IAR
EAR
dv/dt
Tj
T
STG
12.5
-5.0
-55 to 150
mj
V ns
°C
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (typical)
g
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRFM9240
Electrical Characteristics
@Tj = 25°C (Unless Otherwise Specified)
Parameter
BVdSS
Drain-to-source Breakdown Voltage
ABVDSS'^
T
J Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
RDS(on)
Resistance
Gate Threshold Voltage
VGS(th)
Forward Transconductance
9fs
Zero Gate Voltage Drain Current
IDSS
Win
-200
—
—
—
Typ
-0.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
Max
Units
—
—
0.51
0.52
-4.0
—
-25
-250
-100
100
60
15
38
35
85
85
65
Test Conditions
VGS - OV, Ip - -1.0mA
Reference to 25°C, ID = -1.0mA
we
n
V
VGS = -iov, ID = -7.0A-4;
VGS = -iov, ID = -11 A 4
VDS=VQS. lD = -250uA
VDS>-15V lDS = -7-OA4
-2.0
4.0
—
—
s(n)
MA
VDS= -i6ov, VQS= ov
VDS = -160V
VGS = OV,Tj = 125°C
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Ciss
CQSS
Crss
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ('Miller') Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
nA
VGS = -2ov
VGS =2ov
VGS = -10V, ID= -11 A
nC
VDS = -IOOV
VDD = -IOOV ID = -11 A,
RQ=9.1UVGS = -10V
nH
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
570
81
VGS = ov, VDS = -2sv
—
—
PF
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min
—
Typ
—
is
ISM
VSD
trr
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) :i;
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max
Units
-11
A
-44
-4.6
440
7.2
V
nS
uc
Test Conditions
—
—
—
—
—
—
Tj = 25°C, Is = -1 1 A, VGS = OV 4;
Tj = 25°C, IF = -11 A, di/dt <-100A/us
QRR
ton
VDD
^
-5ov 4
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min
—
—
—
Typ
Max
—
0.21
—
Units
Test Conditions
1.0
—
48
°c/w
Typical socket mount
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