20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
IRFP440R, IRFP441R, IRFP442R, IRFP443R
Avalanche Energy Rated
N-Channel Power MOSFETs
8A and 7A, 500V-400V
ros(on) = 0.85O and 1.1O
Features:
•
Single pulse avalanche energy rated
•
SOA is power-dissipation limited
•
Nanosecond switching speeds
•
Linear transfer characteristics
N-CHANNEL ENHANCEMENT MODE
D
• High input
impedance
TERMINAL DIAGRAM
The IRFP440R, IRFP441R, IRFP442R and IRFP443R are
advanced power MOSFETs designed, tested, and guaran-
teed to withstand a specified level of energy in the break-
down avalanche mode of operation. These are n-channel
enhancement-mode silicon-gate power field-effect transis-
tors designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and driv-
ers for high-power bipolar switching transistors requiring
high speed and low gate-drive power. These types can bo
operated directly from integrated circuits.
The IRFP-types are supplied in the JEDEC TO-247 plastic,
package.
TERMINAL DESIGNATION
TOP VIEW
JEOEC TO-247
Absolute Maximum Ratings
V
M
VOCB
lo @ Tc = 25°C
ID @ T
c
= 100°C
lou
Vas
Po @ T
c
= 25°C
EM,
Tj
T.IJ
Parameter
Drain - Source Voltage ©
Drain - Gate Voltage (Rus = 20 KO) CD
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current @
Gate - Source Voltage
Max. Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy Rating ®
Operating Junction and
Storage Temperature flange
Lead Temperature
IRFP44CR
500
500
8.0
5.0
32
IRFP441R
450
450
8.0
5.0
32
IRFP442R
500
500
7.0
4.0
28
IRFP443R
450
450
7.0
4.0
28
Units
V
V
A
A
A
V
W
±20
125
(See Fig.
14)
1.0
(See Fig.
14)
480
W/°C
mj
°C
°C
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRFP440R, IRFP441R, IRFP442R,
IRFP443R
Electrical Characteristics @ T
c
= 25° C (Unless Otherwise Specified)
PWMUT
Mb.
Max.
TVD.
Type
BVn.
Drain • Source Breakdown Voltage
IRFP440R
IRFP442R
IRFP441R
IRFP443R
ALL
ALL
ALL
ALL
Unto
Test CondNtons
VM-OV
b = 2500A
Vn. = VM.lD = 25QuA
V« = 20V
Vo. = -20V
Vn = Max. Rating. VM =
0V
Vn - Max. Rating x 0.8, Vo, = 0V, To = 125°C
500
480
2.0
—
—
—
—
8.0
7.0
-
-
-
-
—
—
_
—
-
-
U
1.0
6.5
1225
-
-
4.0
100
-100
V
V
V
nA
nA
«A
M
A
A
VOMM
Ion
Ion
loo
ln»
Gate Threshold Voltage
Qate-Source Leakage Forward
Oato-Source Leakage Reverse
Z»ro Qata Voltage Drain Current
On-State Drain Current ®
250
1000
RCK»
Static Drain-Source On-State
Resistance®
n>
C.
Co.
Cm
torn
l
U»i
ti
Q,
Of
Qan
Lo
Forward Trantconduclance ®
Input Capacttance
Output Capacitance
Revert; Transfer Capacitance
Turn-On Delay Time
Rlae Time
Turn-Off Delay Time
Fall Time
Total Gate Charfle
(Qate-Source Plus Qate-Oraln)
Gate-Source Charge
Gate-Drain ("Miller") Charge
Internal Drain Inductance
IRFP440R
IRFP441R
IRFP442R
IRFP443R
IRFP440R
IRFP441R
IFIFP442R
IRFP443R
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
-
-
0.86
1.1
—
_
—
—
VD. > low! x ROM
n^.
V« - 10V
a
a
S(0)
PF
f>F
pF
V«=10V, I
D
»4.0A
Vtx > IDIM x RMIMCT,. le
=
4.0A
.0MHz
See
Fig.
10
4.0
_
—
_
—
—
—
—
-
—
_
200
85
17
5
42
14
42
20
22
5.0
35
15 _
90
30
80
—
—
ni
n»
na
ns
nC
nC
nC
nH
Voe - 200V, lo = 4.0A. Ze = 4.70
See
Fig.
17
(MOSFET twitching tlmea are etaentlally
Independent of operating temperature.)
Vai=10V, lo = 10A,V[» = 0.8 Max Rating.
=
See Fig. 18 tor teat circuit (Gate charge la
etaentlally Independent o operating
temperature.)
Measured between
the contact screw on
header that is closer to
source and gate pins
and center of dte.
Measured from the
source pin, 6 mm
(0.25 in.) from
header and source
bonding pad.
Modified MOSFET
symbol showing the
internal device -
Inductances
o
U
Internal Source Inductance
ALL
12.5
nH
Thermal Resistance
R*JC
R»CS
FUJA
JunctiorHojCase
Case-to-Sink
Junction-to-Ambient
ALL
ALL
ALL
_
_
-
....
1.0
"CM
0.1
—
_
30
°c/w
°c/w
Mounting surface flat, smooth, and greased.
Free Air Operation
Source-Drain Diode Rating* and Characteristics
Is
Continuous Source Current
(Body Diode)
IRFP440R
IRFP441R
IHFP442R
IRFP443R
IHFP440R
IRFP441R
IRFP442R
IRFP443R
IRFP440R
IFIFP441H
IRFP442R
IFIFP443R
ALL
ALL
ALL
-
-
-
-
-
-
^.
—
-
-
-
-
-
-
1100
8.0
7.0
32
28
2.0
1.9
_
—
A
A
A
A
V
V
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.
o
Isu
Pulse Source Current
(Body Diode) ®
Vso
Diode Forward Voltage ©
Tc = 25°C. Is = 8.0A VQB = 0V
T
c
= 2S°C, Is = 7.0A, VQS = 0V
t.
Qm
t«<
Reverse Recovery Time
Reverse Recovered Charge
Forward Tum-on Time
6.4
ns
Tj =
150"C. U = 8.0A, dWdt = 100A/^s
Tj = 150°C, b = 8.0A, dWdt = 100A/^s
tiC
Intrinsic turn-on time la negligible.
Tum-on speed Is substantially controlled by U + Lo.
Q Tj = 25°C to 150°C.
®Pube Test: Pulse width <300ps. Duty Cycles 2*.
®
Repetitive Rating: Pulse width limited by max junction temperature. See Transient Thermal Impedance Curve (Fig. 5).
® Voo = 50V. starting Tj = 25°C. L = 11 rnH. R.. == SCO. l_ = 8.8A. See figures 15.16.
Embedded System
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