KSD261
KSD261
Low Frequency Power Amplifier
• Complement to KSA643
• Collector Power Dissipation : P
C
=500mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
40
20
5
500
500
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=1V, I
C
=0.1A
I
C
=0.5A, I
B
=50mA
40
0.18
Min.
40
20
5
0.1
0.1
400
0.4
V
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD261
Typical Characteristics
500
450
1000
I
B
= 2.0mA
I
B
= 1.8mA
V
CE
= 1V
I
C
[mA], COLLECTOR CURRENT
400
350
300
250
200
150
100
50
0
0
1
2
3
4
5
I
B
= 1.4mA
I
B
= 1.2mA
I
B
= 1.0mA
I
B
= 0.8mA
I
B
= 0.6mA
I
B
= 0.4mA
I
B
= 0.2mA
h
FE
, DC CURRENT GAIN
I
B
= 1.6mA
100
10
6
7
8
9
10
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
100
I
C
= 10 I
B
V
CE
= 1V
1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
100
1000
10
0.1
1
V
CE
(sat)
0.01
1
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
I
E
= 0
f = 1MHz
C
ob
[pF], CAPACITANCE
10
1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
KSD261
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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intended to be an exhaustive list of all such trademarks.
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2
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I
2
C™
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®
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®
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®
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®
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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