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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IRF120-123/IRF520-523
MTP10N08/10N10
N-Channel Power MOSFETs,
11 A, 60-100 V
Power And Discrete Division
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high speed applications,
such as switching power supplies, converters, AC and DC
motor controls, relay and solenoid drivers and other pulse
circuits.
Low R
D
s<on)
VQS Rated at ±20 V
Silicon Gate for Fast Switching Speeds
bss. Vos(on), Specified at Elevated Temperature
Rugged
Low Drive Requirements
Ease of Paralleling
TO-204AA
TO-220AB
IRF120
IRF121
IRF122
IRF123
IRF520
IRF521
IRF522
IRF523
MTP10N08
MTP10N10
Product Summary
Part Number
IRF120
IRF121
IRF122
IRF123
IRF520
IRF521
IRF522
IRF523
MTP10N08
MTP10N10
ID at
T
c
= 25°C
8.0 A
8.0 A
7.0 A
7.0 A
8.0 A
8.0 A
7.0 A
7.0 A
10 A
10 A
VDSS
100 V
60 V
100 V
60 V
100 V
60 V
100 V
60 V
80 V
100 V
RoS(on)
0.30 n
ID at
T
c
= 100-C
5.0 A
5.0 A
4.0 A
4.0 A
5.0 A
5.0 A
4.0 A
4.0 A
6.4 A
6.4 A
Case Style
TO-204AA
0.30 n
0.40
n
0.40 n
0.30
n
0.30
n
o.4o n
0.40 Ji
0.33
fi
TO-220AB
0.33 n
Notes
For information concerning connection diagram and package outline, refer to
Section 7.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF120-123/IRF520-523
MTP10N08/10N10
Maximum Ratings
Rating
IRF120/122
IRF520/522
MTP10N10
100
100
Symbol
VDSS
VDGR
Characteristic
Drain to Source Voltage
1
Drain to Gate Voltage
1
R
QS
= 20 kft
Gate to Source Voltage
Operating Junction and
Storage Temperatures
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Rating
MTP10N08
80
80
Rating
IRF122/123
IRF522/523
60
60
Unit
V
V
VGS
Tj,
T
8
|g
±20
±20
±20
V
-55 to
+150
275
-55 to
+150
275
-55 to
+150
275
°c
°c
TL
Maximum Thermal Characteristics
IRF120-123/IRF520-523
R
«JC
MTP10N08/10
1.67
"C/W
°C/W
W
A
Thermal Resistance,
Junction to Case
Thermal Resistance,
Junction to Ambient
Total Power Dissipation
at T
c
= 25°C
Pulsed Drain Current
2
3.12
RftJA
30/80
40
80
75
PD
IDM
20
32
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Off Characteristics
V
(BR)DSS
Characteristic
Drain Source Breakdown Voltage
1
IRF120/122/520/522/
MTP10N10
MTP10N08
IRF121/123/521/523
Win
Max
Unit
Test Conditions
V
100
V
GS
= 0 V, I
D
= 250 MA
80
60
250
UA
MA
nA
loss
Zero Gate Voltage Drain Current
V
DS
- Rated V
DSS
. V
GS
- 0 V
V
DS
= 0.8 x Rated V
DS
s,
V
GS
= 0 V, T
C
=125°C
VQS - ± 20 v, VDS - o V
1000
IQSS
Gate-Body Leakage Current
IRF120-123
IRF520-523/MTP10N08/10
±100
+ 500
IRF120-123/IRF520-523
MTP10N08/10N10
Electrical Characteristics
(Cont.) (Tc = 25°C unless otherwise noted)
Symbol
On Characteristics
VGS(UI)
Gate Threshold Voltage
IRF120-123/IRF520-523
MTP10N08/10N10
R
DS(on)
Characteristic
Win
Max
Unit
Test Conditions
V
2.0
2.0
4.0
4.5
I
D
= 250 MA, VDS = VQS
ID = 1 mA, V
DS
= V
GS
Static Drain-Source On-Resistance
2
IRF120/121/520/521
MTP10N08/10N10
IRF122/123/522/523
0.30
0.33
0.40
n
VGS -10 V
ID = 4.0 A
ID = 5.0 A
ID = 4.0 A
VGS =10 V; ID -10.0 A
V
DS(on)
Drain-Source On-Voltage
2
MTP 10N08/10N10
4.0
3.3
V
V
VQS = 10 V, I
D
= 5.0 A
T
0
= 100-C
V
D
s = 10 V, ID = 4.0 A
9ls
Forward Transconductance
1.5
S (U)
600
400
100
Dynamic Characteristics
Mss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PF
pF
pF
Coss
Crss
VDS = 25 V, VGS = o v
f - 1.0 MHz
Switching Characteristics (T
c
= 25°C, Figures 1, 2)
3
td(on)
t,
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
^
40
ns
ns
ns
ns
nC
70
100
70
15
V
DD
= 50 V, ID = 4.0 A
V
QS
= 10 V, R
G
EN = 50
a
RGS = 50 n
td(oH)
t(
Q
8
Symbol
VGS -10 v, ID = 10 A
V
DD
=• 50 V
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF120/121/520/521
IRF122/123/522/523
Reverse Recovery Time
2.5
2.3
280
V
V
ns
l
s
= 8.0 A; VGS = 0 V
l
s
- 7.0 A; VGS = 0 V
tn-
l
s
- 4.0 A; dls/dt - 25 A/MS
Notes
1. Tj - +25'O to +150'C
2. Pulse width limited by Tj
3. Switching time measurements performed on LEM TR-5B test equipment.
Microchip MCU
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