(s
Iziizu <z3E.mL-L.ona.LL<2toi
LPioauati, Una.
<_/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
IVN5000,1
AN Series
.7 AMPERES
40-100 VOLTS
RDS(ON) = 2.5 a
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
N-CHANNEL
FIELD EFFECT POWER TRANSISTOR
Applications
•
•
•
•
•
•
LED and lamp drivers
High gain, wide-band amplifiers
High speed switches
Line drivers
Logic buffers
Pulse amplifiers
High speed, high peak current switching
Inherent current sharing capability when paralleled
Directly interface to CMOS, DTL, TTL logic
Simple, straight-forward DC biasing
Inherent protection from thermal runaway
Reliable, low cost plastic package
DIMENSIONS ARE IN INCHES AND
(MILLIMETERS)
CASE STYLE TO-237
t
_/
J
S
.105^871
.096(2.41)
Features
.04S(I.14|
UNIT
POWER MOS EFT
TVPE
TO-237
^
.105<2.»71
095(2.41)
TERR2
GATE
TERM.3
DRAIN
TAB
IEfiM.1
SOURCE
CHAIN
maximum ratings 0"^= 25°C) (unless otherwise specified)
RATING
Drain-Source Voltage
SYMBOL
Drain-Gate Voltage, RQS = 1MH
Continuous Drain Current @ TA = 25°C
Peak Drain Current
111
Gate-Source Voltage
Total Power Dissipation @ TA =
25° C
Derate Above 25° C
VDSS
VDGR
D
40
40
0.7
2.0
±30
2.0
16
E
60
60
0.7
2.0
±30
2.0
16
F
80
80
0.7
2.0
±30
2.0
16
H
100
100
0.7
2.0
±30
2.0
16
UNITS
Volts
Volts
A
A
Volts
Watts
mW/°C
°C
"D
'DM
VGS
PD
Operating and Storage
Junction Temperature Range
TJ, TSTG
-55 to 150 -55 to 150 -55 to 150 -55 to 150
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
thermal characteristics
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/16" from Case for 10 Seconds
R0JA
62.5
300
62.5
300
62.5
300
62.5
300
°C/W
°C
T
L
NJ Semi-Concluctors reserves the
right
to
change
test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
electrical characteristics (TA = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNIT
off characteristics
Drain-Source Breakdown Voltage
(V
GS
= ov, I
D
.= 10 M)
'
IVN5000.1AND
IVNSOOO.IANE
BVDSS
IVN5000.1ANF
IVN5000.1ANH
40
60
80
100
—
Volts
—
10
500
10
50
Zero Gate Voltage Drain Current
(V
D
s = Max Rating, V
G
s = OV)
(V
DS
= Max Rating, * 0.8, VQS = OV, T
A
= 125°C)
Gate-Source Leakage Current
(V
G
s = 15V, VDS = ov)
(V
G
s = 15V, V
DS
= ov - T
A
= 125 °C)
•DSS
IGSS
—
—
—
//A
nA
nA
^_
on characteristics'
Gate Threshold Voltage
(V
D
s = VGS. ID = 1 rnA)
Drain-Source Saturation Voltage
IVN5000
IVN5001
V
GS(TH)
V
DS(ON)
.8
.8
—
—
1.0
1.0
.17
—
2.0
1.9
2.0
1.9
—
.28
2.0
3.6
2.5
2.5
2.5
2.5
—
—
Volts
Volts
Volts
Ohms
Ohms
Amp
Amp
(v
G
s = iov, i
D
= 1.0A)
( V
G S
= 12V, I
D
= 1.0A)
(VNSOOO
IVN5001
IVN5001
Static Drain-Source On-State Resistance
(V
GS
= iov, I
D
= 1.0A)
(V
G
s= 12V, I
D
= 1.0A)
IVNSOOO
RDS(ON)
On-State Drain Current
(V
D
s = 24V, VQS = 10V)
(V
D
s = 24V, VGS = 12V)
IVNSOOO
IVNSOOI
iD(ON)
9fs
Forward Transconductance
(V
DS
= 24V, I
D
= 0.5A, f = 1 KHz)
mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = OV
VDS = 24V
f = 1 MHz
Ciss
—
—
—
40
27
6
50
40
10
PF
PF
c
oss
Crss
PF
switching characteristics"
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
'Pulse Test: Pulse width < 300
/js,
duty cycle < 2%
See switching times
waveform below
td(on)
t
r
<d(off)
tf
—
—
—
—
2
2
2
2
5
5
5
5
ns
ns
ns
ns
INPUT
OUTPUT
SWITCHING TIME TEST WAVEFORMS
DIY/Open Source Hardware
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