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L9B

Description
OPTO ELECTRONICS DETECTORS-PROGRAMMABLE UNIJUNCTION TRANSISTORS
File Size385KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet View All

L9B Overview

OPTO ELECTRONICS DETECTORS-PROGRAMMABLE UNIJUNCTION TRANSISTORS

^zmi-donducto'i ^Pioduati, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
OPTO ELECTRONICS
DETECTORS-PROGRAMMABLE UNIJUNCTION TRANSISTORS
GE Type
L14T
ilnode-Cathdde
Voltage
Max.
(V)
±40
D.C. Anode
Current
Max.
(ma)
RiseTin-e
t,
Typica
(nsec)
80
Irraoiance to
Trigger
<S> Rg^SOOK'.!, Vs = 10V
Max.
ImW/Cm
2
Forward on Voltage
VT
Max.
(V)
1.5
P;
(mw;
200
Max.
Package
Type
TO-92
Package
Outline
Mo.
263
Specification
Sheet
No.
55.54
100
OPTO ELECTRONICS
DETECTORS-SCSs
Voltage
/mode to Cathode
-"orward and Reverse
Man.
Forward Voltage
al 175ma Anode Curren t
<S> Ro. = 27k!!
Holding
Current
(a) R,,,. = 27kn
Cathode Gate Currert
to Fire
@ VAC = 40V
RA = 800H
Effective Irradiance
To Trigger
@ VAC
40V
RA = 800!!
CET/pe
L1V
<v;
Max.
(V)
Max.
(mA)
Max.
(;iA)
10
Max.
Package
Type
TO-18
Package
Outline
No.
53
Specification
Sheet
No.
55.41
2.3
|*g$|*
lOmW/Cm'
OPTO ELECTRONICS
DETECTORS-SCR's
Inc <a 25°C
Max
.44
.44
.44
.44
.44
.77
.77
.77
.77
.77
Max. Temp. °c
Opei.
Stor.
Effective Irradiance
(mw/cm
!
) to Trigger '
at25°C TJ, 6Vdc
Win.
0.68
0.68
0.68
0.68
0.68
0.68
0.68
0.68
0.68
Max.
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
4.2
4.2
4.2
4.2
4.2
4.2
4.2
4.2
4.2
4.2
GE Type
PflV/Vso
»
••»'•
(«r
Package
Outline
NO.
?63
Snee! No.
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
190.10
101
L8U
L8F
UA
L86
L8G
L81IU
L811F
MV
too
25
«r
100"
100°
«*•;
109"
IMP'
,
^TT '
wo°
no»
200
--a»»
WP«.
ISO*
.190*
49B»
11
0
11
0
W
101
11
0
102
102
102
102
102
Ml
11
0
1
M
101
»'•
100
[aim
LflllB
L811G
L9U
L9F
L9A
L9B
'isr*
200
25
.
•m£:
108»
U»0°
tto»
.W
IW»
m'
158
-SB I
.44
.44
.44
.44
.44
.77
.77
.77
.77
.77
«*-
?-w»
>«*>-;•
•MSp».,
ioe»
•'W
0.68
0.68
0.68
0.68
0.68
0.68
0.68
0.68
0.68
0.68
0.68
L9G
L911U
L911F
L911A
L911B
L911G
W
25
50
I
*
1» '
200
a«o»
100°
top"
108°
150»
-HP.
«0°
iet
100° •'
...^i-,.
•'M0»
iso»
150°
150°
180°
102
102
102
102
m
NOTE: Gate current to trigger from direct electrical supply is 20 «A typical, 200 #A maximum at 25°C Tj.
1
Effective Irradiance to trigger decreases with increasing anode voltage and increasing gate to cathode resistance.
NJ Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without
nonce.
Information fijrnished
by NJ Semi-Conductors is believed to be both accurate and reliable at the time
or>ing
to press. However. NJ
Semi-Conductors
assumes no responsibility for any errors or omissions discovered in its use
-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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