OM2P50SAT datasheet, PDF - EEWORLD Datasheet

OM2P50SAT: DescriptionPower Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size247KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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OM2P50SAT Overview

Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Parameter Name	Attribute value
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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