|
ITE15F12 |
ITE15C12 |
| Description |
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel |
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel |
| Is it Rohs certified? |
incompatible |
incompatible |
| Maker |
Dynex |
Dynex |
| Reach Compliance Code |
unknown |
unknown |
| Maximum collector current (IC) |
15 A |
15 A |
| Collector-emitter maximum voltage |
1200 V |
1200 V |
| Gate emitter threshold voltage maximum |
6 V |
6 V |
| Gate-emitter maximum voltage |
20 V |
20 V |
| JESD-609 code |
e0 |
e0 |
| Maximum operating temperature |
150 °C |
150 °C |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
80 W |
80 W |
| surface mount |
NO |
NO |
| Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |