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ITE35C12

Description
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size410KB,10 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Download Datasheet Parametric Compare View All

ITE35C12 Overview

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel

ITE35C12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDynex
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)35 A
Collector-emitter maximum voltage1200 V
Gate emitter threshold voltage maximum6 V
Gate-emitter maximum voltage20 V
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

ITE35C12 Related Products

ITE35C12 ITE35F12
Description Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
Is it Rohs certified? incompatible incompatible
Maker Dynex Dynex
Reach Compliance Code unknown unknown
Maximum collector current (IC) 35 A 35 A
Collector-emitter maximum voltage 1200 V 1200 V
Gate emitter threshold voltage maximum 6 V 6 V
Gate-emitter maximum voltage 20 V 20 V
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 150 W 150 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
The amplifier is powered by a single +12V power supply, and other power supply voltages are converted automatically
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