ITS60F06
ITS60F06
Medium Frequency Powerline N-Channel IGBT
Supersedes March 1998, version DS4715-2.2
DS4715-4.0 May 1999
The ITS60F06 is a robust n-channel, enhancement
mode insulated gate bipolar transistor (IGBT) designed for
low power dissipation in a wide range of low to medium
voltage applications such as power supplies, lighting
ballasts and motor drives. The high impedance gate
simplifies gate drive considerations, allowing operation
directly from low power control circuitry.
Fast rise and fall times allow high frequency operation
making the device suitable for the latest systems
employing high frequency switching.
Low saturation voltages minimise power dissipation,
thereby reducing the running cost of the overall system in
which they are used.
The ITS is fully short circuit rated making it especially
suited for motor control and other arduous applications.
Typical applications include high frequency inverters
for motor control, automotive, welding and heating
apparatus. The Powerline range of IGBTs is also
applicable to switched mode and uninterruptible power
supplies.
COLLECTOR
(BOTTOM SIDE
METAL)
Key Parameters
V
CES
V
CE(sat)
I
C25
I
C85
I
CM
t
sc
(max)
(typ)
(max)
(max)
(max)
(max)
600V
1.9V
75A
55A
120A
10
µ
s
EMITTER
COLLECTOR
GATE
Features
q
q
q
q
q
q
q
Enhancement Mode n-Channel Device
High Switching Speed
Low On-state Saturation Voltage
High Input Impedance Simplifies Gate Drive
Latch-Free Operation
Short Circuit Rated
OrCAD Pspice
®
Model Data Provided
Outline type code: TO247
(See Package Details for further information)
Fig.1 Pin connections - top view (not to scale)
C
Applications
q
q
q
q
q
q
High Frequency Inverters
Motor Control
Switched Mode Power Supplies
High Frequency Welding
Battery Truck Drives
Automotive
G
E
Fig.2 ITS60F06 circuit
Ordering Information
Order as:
ITS60F06P
TO247 package
Note: When ordering use complete part number.
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
1/10
ITS60F06
Absolute Maximum Ratings
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 25˚C unless stated otherwise.
Symbol
V
CES
V
GES
I
C25
I
C85
I
CM
P
tot
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Continuous collector current
Pulsed collector current
Power dissipation
T
case
= 25˚C
T
case
= 85˚C
1ms, T
case
= 85˚C
T
case
= 85˚C
V
GE
= 0V
Test Conditions
Max. Units
600
V
V
A
A
A
W
-
±20
75
55
120
155
Thermal And Mechanical Ratings
Symbol
R
th(j-c)
T
j
T
stg
-
Parameter
Thermal resistance
Operating junction temperature range
Storage temperature range
Mounting torque
M3 Screw
Conditions
DC junction to case
-
-
Min.
-
–40
-–40
-
Max. Units
0.42
150
150
1.1
˚C/W
˚C
˚C
Nm
DC Electrical Characteristics
T
case
= 25˚C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(SAT)
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Conditions
V
GE
= 0V, V
CE
= 600V
V
GE
= 20V, V
CE
= 0V
I
C
= 2mA, V
CE
= V
GE
V
GE
= 15V, I
C
= 55A
V
GE
= 15V, I
C
= 55A T
j
= 125˚C
Min.
-
-
4
-
-
Typ.
-
-
6
1.9
2.1
Max. Units
1
±500
7.5
2.6
-
mA
nA
V
V
V
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2/10
ITS60F06
AC Electrical Characteristics
T
case
= 25˚C unless stated otherwise.
Symbol
C
ies
C
oes
C
res
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Conditions
V
CE
= 25V, V
GE
= 15V, f = 1MHz
V
CE
= 25V, V
GE
= 15V, f = 1MHz
V
CE
= 25V, V
GE
= 15V, f = 1MHz
Min.
-
-
-
Typ.
4900
1300
1150
Max. Units
-
-
-
pF
pF
pF
Inductive Switching Characteristics
T
case
= 25˚C unless stated otherwise.
Symbol
t
d(ON)
t
r
E
ON
t
d(OFF)
t
f
E
OFF
Parameter
Turn-on delay time
Rise time
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
R
G(ON)
= R
G(OFF)
= 25Ω
Turn-off energy loss - per cycle
-
3.5
-
mJ
I
C
= 55A
V
GE
=
±15V,
V
CE
= 50%V
ces
Conditions
Min.
-
-
-
-
-
Typ.
370
160
2.5
440
240
Max. Units
-
-
-
-
500
ns
ns
mJ
ns
ns
T
case
= 125˚C unless stated otherwise.
Symbol
t
d(ON)
t
r
E
ON
t
d(OFF)
t
f
E
OFF
Parameter
Turn-on delay time
Rise time
Turn-on energy loss - per cycle
Turn-off delay time
Fall time
R
G(ON)
= R
G(OFF)
= 25Ω
Turn-off energy loss - per cycle
-
6
-
mJ
I
C
= 55A
V
GE
=
±15V,
V
CE
= 50%V
ces
Conditions
Min.
-
-
-
-
-
Typ.
370
160
3.9
490
500
Max. Units
-
-
-
-
-
ns
ns
mJ
ns
ns
Short Circuit Rating
T
case
= 125˚C unless stated otherwise.
Symbol
t
sc
Parameter
Short circuit withstand time
Conditions
V
GE
= 15V, V
CE
= 50% V
CES
Min.
-
Typ.
-
Max. Units
10
µs
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
3/10
ITS60F06
OrCAD PSpice
®
Model Parameters
AGD
2.70E–05
MUN
1.50E+03
AREA
4.05E–05
MUP
450
BVF
1
NB
2.00E+14
BVN
4
TAU
1.44E–07
CGS
1.10E–07
THETA
2.00E–02
COXD
3.00E–13
VT
5.475
JSNE
6.50E–13
VTD
–5
KF
0.896
WB
6.00E–05
KP
10.96
Basic Test Circuit
V
CC
500µF
DUT
Fig.3 Basic d.c. chopper circuit
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
4/10
ITS60F06
Switching Definitions
+15V
V
GE
0V
-15V
t
r
= t
3
- t
2
t
d(on)
= t
2
- t
1
t
3
+ 1µs
I
C
90%
10%
CE
E
on
=
t
1
∫
V
1µs
. I
C
dt
V
CE
t
1
t
2
t
3
t
4
Fig.4 Turn-on characteristics
0V
-15V
t
f
= t
7
- t
6
t
d(off)
= t
6
- t
5
t
7
+ 1µs
V
GE
90%
. I
C
dt
1µs
I
C
V
CE
E
off
=
∫
V
CE
t
5
10%
t
5
t
6
t
7
t
8
Fig.5 Turn-off characteristics
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
5/10
京公网安备 11010802033920号
EEWORLD
