EEWORLDEEWORLDEEWORLD

Part Number

Search

MSB710QT3

Description
TRANSISTOR,BJT,PNP,25V V(BR)CEO,500MA I(C),SOT-23VAR
CategoryDiscrete semiconductor    The transistor   
File Size261KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MSB710QT3 Overview

TRANSISTOR,BJT,PNP,25V V(BR)CEO,500MA I(C),SOT-23VAR

MSB710QT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)85
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)

MSB710QT3 Related Products

MSB710QT3 MSB710RT3
Description TRANSISTOR,BJT,PNP,25V V(BR)CEO,500MA I(C),SOT-23VAR TRANSISTOR,BJT,PNP,25V V(BR)CEO,500MA I(C),SOT-23VAR
Is it Rohs certified? incompatible incompatible
Maker NXP NXP
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A
Configuration Single Single
Minimum DC current gain (hFE) 85 120
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1596  519  1909  1255  1638  33  11  39  26  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号