STK11C68-C20 datasheet, PDF - EEWORLD Datasheet

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STK11C68-C20: Description8KX8 NON-VOLATILE SRAM, 22ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28; Categorystorage storage; File Size59KB，10 Pages; ManufacturerCypress Semiconductor

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STK11C68-C20 Overview

8KX8 NON-VOLATILE SRAM, 22ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28

STK11C68-C20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Parts packaging code	DIP
package instruction	DIP, DIP28,.3
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	22 ns
Other features	STORE/RECAL TO EEPROM SOFTWARE
JESD-30 code	R-CDIP-T28
JESD-609 code	e0
length	35.56 mm
memory density	65536 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.14 mm
Maximum standby current	0.00075 A
Maximum slew rate	0.1 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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STK11C68

8K x 8 nvSRAM

QuantumTrap™

CMOS

Nonvolatile Static RAM

FEATURES

• 20ns, 25ns, 35ns and 45ns Access Times

•

STORE

to EEPROM Initiated by Software

•

RECALL

to SRAM Initiated by Software or

Power Restore

• 10mA Typical I

at 200ns Cycle Time

• Unlimited READ, WRITE and

RECALL

Cycles

• 1,000,000

STORE

Cycles to EEPROM

• 100-Year Data Retention over Full Industrial

Temperature Range

• Commercial and Industrial Temperatures

• 28-Pin DIP and SOIC Packages

DESCRIPTION

The Simtek STK11C68 is a fast static

RAM

with a

nonvolatile, electrically erasable

PROM

element

incorporated in each static memory cell. The

SRAM

can be read and written an unlimited number of

times, while independent nonvolatile data resides in

the

EEPROM

. Data transfers from the

SRAM

to the

EEPROM

(the

STORE

operation), or from

EEPROM

SRAM

(the

RECALL

operation), take place using a

software sequence. Transfers from the

EEPROM

the

SRAM

(the

RECALL

operation) also take place

automatically on restoration of power.

The STK11C68 is pin-compatible with industry-

standard

SRAM

s. MIL-STD-883 device is also

available (STK11C68-M).

BLOCK DIAGRAM

EEPROM ARRAY

128 x 512

PIN CONFIGURATIONS

ROW DECODER

STORE

STATIC RAM

ARRAY

128 x 512

RECALL

STORE/

RECALL

CONTROL

SOFTWARE

DETECT

INPUT BUFFERS

COLUMN I/O

COLUMN DEC

- A

28 - 300 PDIP

28 - 300 CDIP

28 - 350 SOIC

PIN NAMES

- A

Address Inputs

Write Enable

Data In/Out

Chip Enable

Output Enable

Power (+ 5V)

Ground

- DQ

June 1999

4-21

STK11C68-C20 Related Products

	STK11C68-C20	STK11C68-P20	STK11C68-S20
Description	8KX8 NON-VOLATILE SRAM, 22ns, CDIP28, 0.300 INCH, CERAMIC, DIP-28	8KX8 NON-VOLATILE SRAM, 22ns, PDIP28, 0.300 INCH, PLASTIC, DIP-28	8KX8 NON-VOLATILE SRAM, 22ns, PDSO28, 0.350 INCH, PLASTIC, SOIC-28
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor
Parts packaging code	DIP	DIP	SOIC
package instruction	DIP, DIP28,.3	DIP, DIP28,.3	SOP, SOP28,.5
Contacts	28	28	28
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum access time	22 ns	22 ns	22 ns
Other features	STORE/RECAL TO EEPROM SOFTWARE	STORE/RECAL TO EEPROM SOFTWARE	STORE/RECAL TO EEPROM SOFTWARE
JESD-30 code	R-CDIP-T28	R-PDIP-T28	R-PDSO-G28
JESD-609 code	e0	e0	e0
length	35.56 mm	34.67 mm	18.085 mm
memory density	65536 bit	65536 bit	65536 bit
Memory IC Type	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM
memory width	8	8	8
Number of functions	1	1	1
Number of terminals	28	28	28
word count	8192 words	8192 words	8192 words
character code	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	8KX8	8KX8	8KX8
Package body material	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	SOP
Encapsulate equivalent code	DIP28,.3	DIP28,.3	SOP28,.5
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240	240
power supply	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.14 mm	4.57 mm	2.54 mm
Maximum standby current	0.00075 A	0.00075 A	0.00075 A
Maximum slew rate	0.1 mA	0.1 mA	0.1 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V
surface mount	NO	NO	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal pitch	2.54 mm	2.54 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	30	30
width	7.62 mm	7.62 mm	8.765 mm
Is it lead-free?	-	Contains lead	Contains lead

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