Power Field-Effect Transistor, 6A I(D), 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Solitron Devices Inc. |
| Parts packaging code | TO-39 |
| package instruction | TO-39 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Maximum drain current (Abs) (ID) | 6 A |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 0.3 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-XUUC-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 20 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
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