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SL362CCM

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Very High Frequency Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size60KB,2 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Download Datasheet Parametric Compare View All

SL362CCM Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Very High Frequency Band, Silicon, NPN

SL362CCM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDynex
package instructionCYLINDRICAL, O-MBCY-W8
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.05 A
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-MBCY-W8
JESD-609 codee0
Number of components2
Number of terminals8
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)1500 MHz

SL362CCM Related Products

SL362CCM SL360GCM
Description RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Very High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.02A I(C), 2-Element, Very High Frequency Band, Silicon, NPN
Is it Rohs certified? incompatible incompatible
Maker Dynex Dynex
package instruction CYLINDRICAL, O-MBCY-W8 CYLINDRICAL, O-MBCY-W8
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.02 A
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code O-MBCY-W8 O-MBCY-W8
JESD-609 code e0 e0
Number of components 2 2
Number of terminals 8 8
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 1500 MHz 2200 MHz
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