FBI10D5M1-4 datasheet, PDF - EEWORLD Datasheet

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FBI10D5M1-4: DescriptionBridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor diode; File Size151KB，2 Pages; ManufacturerFagor Electrónica; Environmental Compliance

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FBI10D5M1-4 Overview

Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4

FBI10D5M1-4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fagor Electrónica
package instruction	R-PSFM-T4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	170 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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FBI10A5M1.......FBI10M5M1

10 Amp. Glass Passivated Bridge Rectifier

Dimensions in mm.

3.2

3.5x45º

25

Plastic

Case

3.5

Voltage

50 to 1000 V

.

Current

10 A.

R

15

1.5

_

1

+ 0.05

8

2.5

1

+

Glass Passivated Junction Chips.

suffix

4

1

0.7

L

5

UL recognized under component index file

number E320541.

Lead and polarity identifications.

Case: Molded Plastic.

Ideal for printed circuit board (P

.C.B.).

High surge current capability.

The plastic material carries U/L recognition 94 V-O.

17.5

8

Mounting Instructions

High temperature soldering guaranteed: 260 ºC 10 sc.

Recommended mounting torque: 8 Kg.cm.

Maximum Ratings, according to IEC publication No. 134

FBI10A FBI10B

5M1

FBI10D FBI10G

5M1

FBI10J

5M1

FBI10K

5M1

FBI10M

5M1

V

RRM

V

RMS

I

F(AV)

I

FSM

I

2

t

V

DIS

T

j

T

stg

V

F

I

R

th

R

th

Peak recurrent reverse voltage (V)

Maximum RMS voltage (V)

Max. Average forward current with heatsink

without heatsink

10 ms. peak forward surge current

(Jedec Method)

Current squared time (rating for fusing)

(1ms.<t<10ms. Tc = 25ºC)

Dielectric strength (terminals to case, AC 1 min.)

Operating temperature range

Storage temperature range

50

35

100

70

200

140

400

280

600

420

800

560

1000

700

10.0 A at 100 ºC

3.0 A at 25 ºC

170 A

110 A sec

2500 V

55 to + 150 °C

55 to +150 ºC

2

Electrical Characteristics at Tamb = 25°C

Max. forward voltage drop per diode at I

F

= 5.0 A

Max. instantaneous reverse current at V

RRM

MAXIMUM THERMAL RESISTANCE

Junction-Case. With Heatsink.

Junction-Ambient. Without Heatsink.

1.10 V

5 A

2.2 ºC/W

22 ºC/W

Pb

Pb FREE

Dec - 08

FBI10D5M1-4 Related Products

	FBI10D5M1-4	FBI10B5M1-4	FBI10M5M1-4	FBI10G5M1-4	28R0984-000	FBI10A5M1-4	FBI10J5M1-4
Description	Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 100V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4	this print is the property of laird tech	Bridge Rectifier Diode, 1 Phase, 3A, 50V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, LEAD FREE, PLASTIC PACKAGE-4
Is it Rohs certified?	conform to	conform to	conform to	conform to	-	conform to	conform to
Maker	Fagor Electrónica	Fagor Electrónica	-	-	-	Fagor Electrónica	Fagor Electrónica
package instruction	R-PSFM-T4	LEAD FREE, PLASTIC PACKAGE-4	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4	LEAD FREE, PLASTIC PACKAGE-4
Contacts	4	4	4	4	-	4	4
Reach Compliance Code	unknown	unknown	unknown	unknown	-	unknown	unknown
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	-	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	-	R-PSFM-T4	R-PSFM-T4
JESD-609 code	e3	e3	e3	e3	-	e3	e3
Maximum non-repetitive peak forward current	170 A	170 A	170 A	170 A	-	170 A	170 A
Number of components	4	4	4	4	-	4	4
Phase	1	1	1	1	-	1	1
Number of terminals	4	4	4	4	-	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	-	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	-	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	100 V	1000 V	400 V	-	50 V	600 V
surface mount	NO	NO	NO	NO	-	NO	NO
Terminal surface	TIN	TIN	TIN	TIN	-	TIN	TIN
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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