Standard SRAM, 2KX8, 90ns, CMOS, CDIP24, CERAMIC, DIP-24
| Parameter Name | Attribute value |
| Maker | IDT (Integrated Device Technology) |
| Parts packaging code | DIP |
| package instruction | DIP, |
| Contacts | 24 |
| Reach Compliance Code | compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 90 ns |
| JESD-30 code | R-GDIP-T24 |
| JESD-609 code | e0 |
| length | 32.004 mm |
| memory density | 16384 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Humidity sensitivity level | 1 |
| Number of functions | 1 |
| Number of terminals | 24 |
| word count | 2048 words |
| character code | 2000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 2KX8 |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT APPLICABLE |
| Certification status | Qualified |
| Maximum seat height | 5.08 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT APPLICABLE |
| width | 7.62 mm |
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