LL42 and LL43
Schottky Diodes
MiniMELF (SOD-80C)
Cathode Band
Features
• For general purpose applications
• These diodes feature very low turn-on voltage
and fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
• These diodes are also available in the DO-35
case with type designations BAT42 to BAT43 and
in the SOD-123 case with type designations
BAT42W to BAT43W.
.063 (1.6)
Dia.
.051 (1.3)
.146 (3.7)
.130 (3.3)
.019 (0.48)
.011 (0.28)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
Cathode Band Color:
Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape)
D2/2.5K per 7” reel (8mm tape)
Maximum Ratings & Thermal Characteristics
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25°C
Repetitive Peak Forward Current
at t
p
< 1s,
δ
< 0.5, T
amb
= 25°C
Surge Forward Current at t
p
< 10ms, T
amb
= 25°C
Power Dissipation at T
amb
= 65°C
Thermal Resistance Juntion to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
R
ΘJA
T
j
T
amb
T
S
Value
30
200
(1)
500
(1)
4
(1)
200
(1)
0.3
(1)
125
–55 to +125
–65 to +150
Unit
V
mA
mA
A
mW
°C/mW
°C
°C
°C
3/14/00
LL42 and LL43
Schottky Diodes
Electrical Characteristics
(T
Parameter
Reverse Breakdown Voltage
Leakage Current
Pulse Test t
p
= 300µs,
δ
< 2%
LL42
LL42
LL43
LL43
J
= 25°C unless otherwise noted)
Symbol
V
(BR)R
I
R
Test Condition
100µA pulses
V
R
= 25V
V
R
= 25V, Tj = 100°C
I
F
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2mA
I
F
= 15mA
V
R
= 1V, f = 1MHz
I
F
= 10mA, I
R
= 10mA,
to I
R
= 1mA, R
L
= 100
Ω
R
L
= 15KΩ, C
L
= 300pF,
f = 45MHz, V
RF
= 2V
Min
30
—
—
—
—
—
0.26
—
—
—
80
Typ
—
—
—
—
—
—
—
—
7
—
—
Max
—
0.5
100
1
0.4
0.65
0.33
0.45
—
5
—
Unit
V
µA
Forward Voltage
Pulse Test t
p
< 300µs,
δ
< 2%
V
F
V
Capacitance
Reverse Recovery Time
Rectification Efficiency
C
tot
t
rr
η
½
pF
ns
%