TLP351
TOSHIBA Photocoupler
GaAℓAs IRED + Photo IC
TLP351
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.
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Peak output current: ±0.6 A (max)
Guaranteed performance over temperature: −40 to 100°C
Supply current: 2 mA (max)
Power supply voltage: 10 to 30 V
Switching time (t
pLH
/t
pHL
) : 700 ns (max)
Threshold input current : I
F
= 5 mA (max)
Unit: mm
Common mode transient immunity: ±10 kV/μs
Isolation voltage: 3750 Vrms
UL approved: UL1577, File No.E67349
cUL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Option(D4)
VDE Approved : DIN EN60747-5-5
Maximum Operating Insulation Voltage : 890 V
PK
Highest Permissible Over Voltage
Please designate “Option(D4)”
: 4000 V
PK
(Note): When a EN60747-5-5 approved type is needed,
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Pin Configuration (top view)
1
2
3
4
I
CC
(Tr1)
V
CC
8
8
7
6
5
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: GND
6: V
O
(output)
7: N.C.
8: V
CC
Schematic
I
F
2+
V
F
3−
I
O
(Tr2)
V
O
6
GND
5
A 0.1
μF
bypass capacitor must be connected
between pin 8 and 5.
Start of commercial production
1
2002-05
2017-11-29
TLP351
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Forward current
Forward current derating (Ta
≥
85°C)
Peak transient forward current
LED
Reverse voltage
Power Dissipation
Power Dissipation Derating (Ta
≥
85°C)
Junction temperature
“H” peak output current
“L” peak output current
Detector
Output voltage
Supply voltage
Output Power Dissipation
Output Power Dissipation Derating (Ta
≥
85°C)
Junction temperature
Operating frequency
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H.
≤
60%)
(Note 4)
(Note 5)
(Note 3)
(Note 2)
(Note 2)
(Note 1)
Symbol
I
F
∆I
F
/∆Ta
I
FP
V
R
P
D
∆P
D
/°C
T
j
I
OPH
I
OPL
V
O
V
CC
P
O
∆P
O
/°C
T
j
f
T
stg
T
opr
T
sol
BV
S
Rating
20
−0.54
1
5
40
-1.0
125
−0.6
0.6
35
35
260
-6.5
125
25
−55
to 125
−40
to 100
260
3750
Unit
mA
mA/°C
A
V
mW
mW/°C
°C
A
A
V
V
mW
mW/°C
°C
kHz
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width P
W
≤
1
μs,
300 pps
Note 2: Exponential waveform pulse width P
W
≤
10
μs,
f
≤
15 kHz
Note 3: Exponential waveform I
OPH
≤
−0.4
A (≤ 2.0
μs),
I
OPL
≤
+0.4
A (≤ 2.0
μs),
Ta
=
100°C
Note 4: It is 2 mm or more from a lead root.
Note 5: Device considered a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
Recommended Operating Conditions
Characteristics
Input current, ON
Input voltage, OFF
Supply voltage
Peak output current
Operating temperature
(Note 7)
Symbol
I
F (ON)
V
F (OFF)
V
CC
I
OPH
/I
OPL
T
opr
Min
7.5
0
10
―
−40
Typ.
―
―
―
―
―
Max
10
0.8
30
±0.2
100
Unit
mA
V
V
A
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Note 7: Input signal rise time (fall time)
<
0.5
μs
2
2017-11-29
TLP351
Electrical Characteristics
(Ta
=
−40
to 100°C, unless otherwise specified)
Characteristics
Forward voltage
Temperature coefficient of forward
voltage
Input reverse current
Input capacitance
“H” Level
Output current
(Note 8)
“L” Level
Symbol
V
F
∆V
F
/∆Ta
I
R
C
T
I
OPH1
I
OPH2
I
OPL1
I
OPL2
“H” Level
Output voltage
“L” Level
“H” Level
Supply current
“L” Level
Threshold input current
Threshold input voltage
Supply voltage
L
→
H
H
→
L
I
CCL
I
FLH
V
FHL
V
CC
6
―
―
―
V
OL
I
CCH
4
5
V
OH
3
V
CC
=
10 V
2
Test
Circuit
―
―
―
―
1
Test Condition
I
F
=
5 mA, Ta
=
25°C
I
F
=
5 mA
V
R
=
5 V, Ta
=
25°C
V
=
0 V , f
=
1 MHz,Ta
=
25°C
V
CC
=
15 V
I
F
=
5 mA
V
CC
=
15 V
I
F
=
0 mA
V
8-6
=
4 V
V
8-6
=
10 V
V
6-5
=
2 V
V
6-5
=
10 V
I
O
=
−100
mA,
I
F
=
5 mA
I
O
=
100 mA,
V
F
=
0.8 V
Min
―
―
―
―
―
―
0.2
0.4
6.0
―
―
―
―
0.8
10
Typ.*
1.55
−2.0
―
45
−0.4
−0.67
0.35
0.63
8.5
0.4
1.4
1.3
2.5
―
―
Max
1.70
―
10
―
−0.2
−0.4
―
―
―
V
1.0
2.0
mA
2.0
5
―
30
mA
V
V
A
Unit
V
mV/°C
μA
pF
V
CC
=
10 to 30 V I
F
=
10 mA
V
O
open
I
F
=
0 mA
V
CC
=
15 V, V
O
> 1 V
V
CC
=
15 V, V
O
< 1 V
―
*:
All typical values are at Ta
=
25°C
Note 8: Duration of I
O
time
≤
50
μs
Note 9: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest
power consumption design.
General precaution to static electricity (ESD) is necessary for handling this component.
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
Test Conditions
V
S
= 0V, f = 1MHz
V
S
=
500 V, R.H.
≤
60%
AC,1 minute
Isolation voltage
BV
S
AC,1 second, in oil
DC,1 minute, in oil
(Note5)
Min
―
Typ.
1.0
10
14
―
10000
10000
Max
―
―
―
―
―
Unit
pF
Ω
V
rms
Vdc
(Note5) 1×10
12
3750
―
―
3
2017-11-29
TLP351
Switching Characteristics
(Ta
=
−40
to 100°C, unless otherwise specified)
Characteristics
L
→
H
Propagation delay time
H
→
L
t
pHL
Symbol
t
pLH
Test
Circuit
Test Condition
V
CC
=
30 V
R
g
=
47
Ω
C
g
=
3 nF
V
CC
=
30 V,
7
R
g
=
47
Ω
C
g
=
3 nF
Output rise time (10-90%)
Output fall time (90-10%)
Common mode transient immunity
at high level output
Common mode transient immunity
at low level output
t
r
t
f
CM
H
8
CM
L
V
CC
=
30 V
R
g
=
47
Ω
C
g
=
3 nF
I
F
=
5
→
0 mA
I
F
=
0
→
5 mA
―
―
50
50
―
―
―
ns
―
―
V/μs
―
−500
―
500
ns
I
F
=
0
→
5 mA
I
F
=
5
→
0 mA
Min
100
100
Typ.*
―
―
Max
700
ns
700
Unit
Propagation delay difference
between any two parts or channels
PDD
|t
pHL
-t
pLH
|
I
F
=
5 mA
V
CM
=
1000 Vp-p V
O (min)
=
26 V
−10000
Ta
=
25°C
I
F
=
0 mA
V
CC
=
30 V
10000
V
O (max)
=
1 V
*:
All typical values are at Ta
=
25°C
Test Circuit 1: I
OPH
8
1
V8-6
I
F
4
5
A I
OPH
V
CC
Test Circuit 2: I
OPL
8
1
I
OPL
A
4
5
V6-5
V
CC
Test Circuit 3: V
OH
8
1
I
F
V
CC
4
5
V
OH
V
Test Circuit 4: V
OL
8
1
V
OL
V
4
5
V
CC
V
F
Test Circuit 5: I
CCH
8
1
I
F
V
CC
4
5
I
CCH
A
Test Circuit 6: I
CCL
8
1
I
CCL
A
V
CC
4
5
4
2017-11-29
TLP351
Test Circuit 7: t
pLH
, t
pHL
, t
r
, t
f
, PDD
8
0.1
μF
1
I
F
V
O
Rg
=
47
Ω
Cg
=
3 nF
4
5
t
pLH
V
CC
V
O
t
pHL
I
F
t
r
t
f
90
%
50
%
10
%
Test Circuit 8: CM
H
, CM
L
8
SW
A
B
4
5
V
CM
+
−
V
O
0.1
μF
I
F
1
V
CM
90
%
10
%
t
r
V
O
V
CC
•
SW A: I
F
=
5 mA
26V
1V
•
SW B: I
F
=
0 mA
800 V
t
r
(μs)
800 V
t
f
(μs)
CM
L
t
f
CM
H
1000 V
CM
L
=
CM
H
=
CM
L
(CM
H
) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the
output voltage in the low (high) state.
5
2017-11-29
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