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SiHFU1N60A

Description
1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Categorysemiconductor    Discrete semiconductor   
File Size3MB,7 Pages
ManufacturerLucky Light Electronic
Websitehttp://www.lucky-light.com
Download Datasheet Parametric Compare View All

SiHFU1N60A Overview

1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

SiHFU1N60A Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage600 V
Processing package descriptionDPAK-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current1.4 A
Rated avalanche energy93 mJ
Maximum drain on-resistance7 ohm
Maximum leakage current pulse5.6 A
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Max.) (Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
14
2.7
8.1
Single
D
FEATURES
600
7.0
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
DPAK
(TO-252)
IPAK
(TO-251)
G
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction
S
N-Channel
MOSFET
TYPICAL SMPS TOPOLOGIES
• Low Power Single Transistor Flyback
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR1N60APbF
SiHFR1N60A-E3
IRFR1N60A
SiHFR1N60A
DPAK (TO-252)
IRFR1N60ATRLPbF
a
SiHFR1N60ATL-E3
a
-
-
DPAK (TO-252)
IRFR1N60ATRPbF
a
SiHFR1N60AT-E3
a
IRFR1N60ATR
a
SiHFR1N60AT
a
DPAK (TO-252)
IRFR1N60ATRRPbF
a
SiHFR1N60ATR-E3
a
-
-
IPAK (TO-251)
IRFU1N60APbF
SiHFU1N60A-E3
IRFU1N60A
SiHFU1N60A
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
1.4
0.89
5.6
0.28
93
1.4
3.6
36
3.8
- 55 to + 150
300
d
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 95 mH, R
G
= 25
Ω,
I
AS
= 1.4 A (see fig. 12).
c. I
SD
1.4 A, dI/dt
180 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
www.kersemi.com
1

SiHFU1N60A Related Products

SiHFU1N60A IRFR1N60A_15 IRFR1N60A IRFU1N60A
Description 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals 2 2 2 2
Minimum breakdown voltage 600 V 600 V 600 V 600 V
Processing package description DPAK-3 DPAK-3 DPAK-3 DPAK-3
state DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
terminal coating tin lead tin lead tin lead tin lead
Terminal location single single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
transistor applications switch switch switch switch
Transistor component materials silicon silicon silicon silicon
Channel type N channel N channel N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply universal power supply universal power supply
Maximum leakage current 1.4 A 1.4 A 1.4 A 1.4 A
Rated avalanche energy 93 mJ 93 mJ 93 mJ 93 mJ
Maximum drain on-resistance 7 ohm 7 ohm 7 ohm 7 ohm
Maximum leakage current pulse 5.6 A 5.6 A 5.6 A 5.6 A
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