UNISONIC TECHNOLOGIES CO., LTD
2SB1412
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
PNP SILICON TRANSISTOR
The UTC
2SB1412
is an epitaxial planar type PNP silicon
transistor.
FEATURES
* Excellent DC current gain characteristics
* Low V
CE(SAT)
V
CE(SAT)
= -0.35V (Typ)
(I
C
/I
B
= -4A/-0.1A)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB1412L-x-TN3-T
2SB1412G-x-TN3-T
2SB1412L-x-TN3-R
2SB1412G-x-TN3-R
Package
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tape Reel
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QW-R209-021.C
2SB1412
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-20
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current(DC)
I
C
-5
A
Collector Current(PULSE) Single pulse, Pw=10ms
I
CP
-10
A
1
W
Collector Power Dissipation
P
D
Collector Power Dissipation (T
C
=25C) (note2)
10
W
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-40 ~ +150
C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When mounted on a 40×40×0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
C
OB
TEST CONDITIONS
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
= -20V
V
EB
= -5V
V
CE
= -2V,Ic= -0.5A
I
C
/I
B
= -4A/-0.1A
V
CE
= -6V, I
E
= 50 mA, f=30MHz
V
CB
= -20V, I
E
= 0 A, f=1MHz
MIN
-30
-20
-6
TYP MAX UNIT
V
V
V
-0.5
μA
-0.5
μA
390
-1.0
V
120
MHz
60
pF
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
82
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
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QW-R209-021.C
2SB1412
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
-5
-4
PNP SILICON TRANSISTOR
-10
-5 V
CE
= -2V
Collector Current: Ic(mA)
-2
-1
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
0
Grounded Emitter Output
Characteristics
-50mA
-45mA
-30mA Ta=25℃
-25mA
-20mA
-15mA
-3
-10mA
-2
-35mA
-40mA
-5mA
Ta=25℃
Ta= -25℃
Collector Current: Ic(A)
Ta=100℃
-1
0
0
I
B
=0mA
-1.6
-2.0
-0.2 -0.4 -0.6 -0.8
-1.0 -1.2 -1.4
-0.4
-0.8
-1.2
Base to Emitter Voltage:V
BE
(V)
DC Current Gain vs.Collector Current (I)
5k
2k
DC Current Gain:
h
FE
1k
500
200
100
50
20
10
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5-1 -2 -5 -10
Collector Current : Ic(A)
DC Current Gain vs.Collector Current (III)
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
5k
2k
DC Current Gain:
h
FE
1k
500
200
100
50
20
10
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5-1 -2 -5 -10
Collector Current : Ic(A)
Ta=100℃
Vc
E
= -2V
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Vc
E
= -5V
Vc
E
= -2V
Vc
E
= -1V
Ta=25℃
DC Current Gain:
h
FE
5k
2k
1k
500
200
100
50
20
10
Collector to Emitter Voltage:V
CE
(V)
DC Current Gain vs.Collector
Current(II)
Vc
E
= -1V
Ta=100℃
Ta=25℃
Ta= -25℃
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (I)
Ta=25℃
Ta= -25℃
Ta=25℃
Ic/I
B
=50/1
40/1
30/1
10/1
-0.02
-0.01
-0.2
-2m -5m
-0.01-0.02-0.05 -0.1
-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
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2SB1412
TYPICAL CHARACTERISTICS(Cont.)
Collector-emitter Saturation Voltage
vs.Collector Current (II)
Ic/I
B
=10
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
PNP SILICON TRANSISTOR
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Collector-emitter Saturation Voltage
vs.Collector Current (III)
Ic/I
B
=30
Ta=100℃
Ta=25℃
Ta=100℃
Ta=25℃
Ta= -25℃
-0.02
-0.01
-2m
-0.2
-5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
-0.02
-0.01
-2m -5m
Ta= -25℃
-0.2
-0.01-0.02-0.05 -0.1
-0.5-1
-2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (IV)
Collector Saturation Voltage:V
CE
(
SAT
)
( V)
Ic/I
B
=40
Ta= -25℃
Ta=25℃
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (V)
Ic/I
B
=50
Ta= -25℃
Ta=25℃
Ta=100℃
Collector Saturation Voltage:V
CE
(
SAT
) ( V)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-5
-2
-1
-0.5
-0.2
-0.1
Ta=100℃
-0.05
-0.02
-0.01
-2m -5m
-0.2
-0.01-0.02-0.05 -0.1
-0.5-1
-2 -5 -10
Collector Current : Ic(A)
-0.02
-0.01
-2m
-0.2
-5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
Collector Current : Ic(A)
Collector Output Capacitance :Cob (pF)
1000
500
Transetion Frequency :fT (MHz)
200
100
50
20
10
5
2
1
1
Gain Bandwidth Product vs.Emitter
Current
Ta=25℃
Vc
E
= -6V
1000
500
200
100
50
20
Collector Output Capacitance
vs.Collector-Base Voltage
Ta=25℃
f =1MHz
I
E
=0A
2
5
50 100200 500 1000
Emitter Current : I
E
(mA)
10 20
10
-0.1 -0.2 -0.5 -1
-2
-5
-10 -20
-50
Collector to Base Voltage:V
CB
(V)
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QW-R209-021.C
2SB1412
TYPICAL CHARACTERISTICS(Cont.)
Emitter Input Capacitance vs.Emitter-
Base Voltage
Ta=25℃
f=1MHz
I
c
=0A
PNP SILICON TRANSISTOR
1000
Emitter Input Capacitance:Cib (pF)
500
200
100
50
20
-0.1
-0.2
-0.5 -1
-2
-5 -10
Emitter To Base Voltage : V
EB
(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R209-021.C
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