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2SC2383

Description
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size79KB,1 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

2SC2383 Overview

Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PLASTIC, TO-92MOD, 3 PIN

2SC2383 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz

2SC2383 Preview

MCC
Features
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
2SC2383
Capable of 0.9Watts of Power Dissipation.
Collector-current 1.0A
Collector-base Voltage 160V
Operating and storage junction temperature range: -55
O
C to +150
O
C
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92MOD
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Emitter-Base Voltage
(I
E
=10uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=150Vdc, I
E
=0)
Collector Cutoff Current
(V
CB
=150Vdc, R
EB
=10m OHM)
Emitter Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
DC Current Gain
(I
C
=200mAdc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
Base-Emitter Voltage
(I
C
=5.0mAdc, V
CE
=5.0Vdc)
Transistor Frequency
(I
C
=200mAdc, V
CE
=5.0Vdc )
Min
160
160
6.0
1.0
10
1.0
Max
Units
Vdc
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CER
I
EBO
Vdc
Vdc
uAdc
uAdc
uAdc
A
B
C
D
F
H
I
J
G
K
MM
MIN
---
---
---
---
---
1.27
1.27
2.54
1.00
---
---
---
---
---
DIMENSIONS
ON CHARACTERISTICS
h
FE(1)
V
CE(sat)
V
BE
60
320
1.0
0.75
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
20
MHz
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
CLASSIFICATION OF H
FE (1)
Rank
Range
R
60-120
O
100-200
Y
160-320
INCHES
MIN
MAX
---
.030
---
.039
---
.031
---
.024
---
.201
.050
.050
.100
.039
---
.087
---
.024
---
.323
---
.413
---
.161
N
MAX
.750
1.00
.80
0.60
5.10
NOTE
2.20
.60
8.20
10.50
4.10
www.mccsemi.com
Revision: 2
2003/04/30
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