TPSMC6.8 thru TPSMC47A
Vishay Semiconductors
Surface Mount Automotive Transient Voltage Suppressors
High Temperature Stability & High
Reliability Conditions
Major Ratings and Characteristics
V
(BR)
P
PPM
I
FSM
T
j
max.
6.8 V to 47 V
1500 W
200 A
185 °C
*
ted
n
ate
P
*
Patent #'s
4,980,315
5,166,769
5,278,094
DO-214AB (SMC)
Features
• Patented PAR
®
construction
• Available in Unidirectional polarity only
• 1500 W peak pulse power capability with a
10/1000 µs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Typical I
D
less than 1.0 µA above 15 V rating
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive, and
Telecommunication
Mechanical Data
Case:
DO-214AB (SMC)
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Maximum Ratings
(T
A
= 25 °C, unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000
µs
waveform
(1)(2) (Fig. 3)
Peak power pulse current with a 10/1000
µs
waveform
(1) (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Maximum instantaneous forward voltage at 100 A
(2)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum
Symbol
P
PPM
I
PPM
I
FSM
V
F
T
J
, T
STG
Value
Minimum 1500
See Next Table
200
3.5
- 65 to + 185
Unit
W
A
A
V
°C
Document Number 88407
15-Aug-05
www.vishay.com
1
TPSMC6.8 thru TPSMC47A
Vishay Semiconductors
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
100
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
20000
C
J
- Junction Capacitance (pF)
P
PP
M - Peak Pulse Power (kW)
10000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Measured at
Zero Bias
10
1000
Measured at
Stand-Off
Voltage, V
WM
1
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
100
1.0
10
100
200
td - Pulse
Width
(sec.)
V
(BR)
- Breakdown
Voltage
(V)
Figure 1. Peak Pulse Power Rating Curve
Figure 4. Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
200
I
FSM
- Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
75
50
50
25
0
0
25
50
75
100
125
150
175
200
10
1
5
10
50
100
T
J
- Initial Temperature (°C)
Number
of Cycles at 60 Hz
Figure 2. Pulse Power or Current versus Initial Junction
Temperature
150
Figure 5. Maximum Non-Repetitive/Peak Forward Surge Current
I
PPM
- Peak Pulse Current, % I
RSM
tr = 10
µsec.
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50 % of I
PPM
100
Half
Value
— IPP
2
I
PPM
50
10/1000
µsec. Waveform
as defined
by
R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t - Time (ms)
Figure 3. Pulse Waveform
Document Number 88407
15-Aug-05
www.vishay.com
3
Microcontroller MCU
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