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BC856...-BC860...
PNP Silicon AF Transistor
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 hz and 15 kHz
•
Complementary types:
BC846...-BC850... (NPN)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
1
Pb-containing
package may be available upon special request
1
2008-04-29
BC856...-BC860...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BC856...
I
C
= 10 mA,
I
B
= 0 , BC857..., BC860...
I
C
= 10 mA,
I
B
= 0 , BC858..., BC859...
65
45
30
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC856...
I
C
= 10 µA,
I
E
= 0 , BC857..., BC860...
I
C
= 10 µA,
I
E
= 0 , BC858..., BC859...
80
50
30
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
140
250
480
180
290
520
0.015
5
-
-
-
-
250
475
800
mV
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.C
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.C
-
-
-
125
220
420
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
75
250
700
850
650
-
300
650
-
-
750
820
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse
600
-
test: t < 300µs; D < 2%
4
2008-04-29
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