BT139-800
4Q Triac
27 September 2013
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended
for use in applications requiring high bidirectional transient and blocking voltage
capability and high thermal cycling performance.
2. Features and benefits
•
•
•
•
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Less sensitive gate for high noise immunity
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
-
22
70
mA
-
10
35
mA
-
8
35
mA
-
5
35
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
155
16
Unit
V
A
A
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TO
-2
20A
B
NXP Semiconductors
BT139-800
4Q Triac
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT139-800
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BT139-800
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
2 / 13
NXP Semiconductors
BT139-800
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
16
155
170
120
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT139-800
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© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
3 / 13
NXP Semiconductors
BT139-800
4Q Triac
50
I
T(RMS)
(A)
40
001aab090
20
I
T(RMS)
(A)
15
001aab091
(1)
30
10
20
5
10
0
10
- 2
10
- 1
1
10
surge duration (s)
0
- 50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
= 99 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
25
P
tot
(W)
20
(1) T
mb
= 99 °C
Fig. 2.
RMS on-state current as a function of mounting
base temperature; maximum values
001aab093
95
T
mb(max)
(°C)
101
α=
180
120
90
15
60
30
107
10
α
113
5
α
119
0
0
5
10
15
I
T(RMS)
(A)
125
20
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values.
BT139-800
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© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
4 / 13
NXP Semiconductors
BT139-800
4Q Triac
160
I
TSM
(A)
120
I
T
001aab102
I
TSM
80
t
T
j(initial)
= 25 °C max
T
40
0
1
10
10
2
n
10
3
f = 50 Hz; n = number of cycles
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
3
001aab092
I
TSM
(A)
10
2
(1)
I
T
I
TSM
(2)
10
10
- 2
t
T
j(initial)
= 25 °C max
10
- 1
1
10
T (ms)
10
2
T
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT139-800
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
27 September 2013
5 / 13
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