ZUMT2907A datasheet, PDF - EEWORLD Datasheet

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ZUMT2907A: DescriptionSOT323 PNP SILICON PLANAR SWITCHING TRANSISTOR; File Size25KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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SOT323 PNP SILICON PLANAR SWITCHING TRANSISTOR

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SOT323 PNP SILICON PLANAR

SWITCHING TRANSISTOR

ISSUE 1 – OCTOBER 1998

FEATURES

*

Fast switching

PARTMARKING DETAIL – T15

COMPLIMENTARY TYPE – ZUMT2222A

7

ZUMT2907A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

VALUE

-60

-5

-600

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector-Emitter Cut-Off

Current

Collector Cut-Off Current

Base Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

I

CBO

I

B

V

CE(sat)

V

BE(sat)

h

FE

75

100

50

200

MIN.

-60

-5

-50

-10

-50

-0.4

-1.6

-1.3

-2.6

MAX.

UNIT

V

nA

µA

nA

V

CONDITIONS.

I

C

=-10µA, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-10µA, I

C

=0

V

CE

=-30V, V

BE

=-0.5V

V

CB

=-50V, I

E

=0

V

CB

=-50V, I

E

=0, T

amb

=150°C

V

CE

=-30V, V

BE

=-0.5V

I

C

=-150mA, I

B

=-15mA*

I

C

=-500mA, I

B

=-50mA*

I

C

=-150mA, I

B

=-15mA*

I

C

=-500mA, I

B

=-50mA*

I

C

=-0.1mA, V

CE

=-10V

I

C

=-1mA, V

CE

=-10V

I

C

=-10mA, V

CE

=-10V

I

C

=-150mA, V

CE

=-10V*

I

C

=-500mA, V

CE

=-10V*

MHz

I

C

=-50mA, V

CE

=-20V

f=100MHz

300

Transition

Frequency

f

T

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2%

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