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NL27WZU04DFT4

Description
DUAL 1-INPUT INVERT GATE, PDSO6, SC-70, SC-88, SOT-363, 6 PIN
Categorylogic    logic   
File Size117KB，6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NL27WZU04DFT4 Overview

DUAL 1-INPUT INVERT GATE, PDSO6, SC-70, SC-88, SOT-363, 6 PIN

NL27WZU04DFT4 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSOT-363
package instructionSC-70, SC-88, SOT-363, 6 PIN
Contacts6
Reach Compliance Codeunknown
JESD-30 codeR-PDSO-G6
JESD-609 codee0
length2 mm
Load capacitance (CL)50 pF
Logic integrated circuit typeINVERTER
MaximumI(ol)0.006 A
Number of functions2
Number of entries1
Number of terminals6
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP6,.08
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
method of packingTAPE AND REEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Prop。Delay @ Nom-Sup7 ns
propagation delay (tpd)7 ns
Certification statusNot Qualified
Schmitt triggerNO
Maximum seat height1.1 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width1.25 mm

NL27WZU04DFT4 Preview

NL27WZU04
Dual Unbuffered Inverter
The NL27WZU04 is a high performance dual unbuffered inverter
operating from a 1.65 to 5.5 V supply. These devices are well suited
for use as oscillators, pulse shapers, and in many other applications
requiring a high−input impedance amplifier. For digital applications,
the NL27WZ04 is recommended.
Features
http://onsemi.com
MARKING
DIAGRAMS
6
SC−88/SOT−363/SC−70
DF SUFFIX
CASE 419B
M6 M
G
G
M
•
•
•
•
•
Designed for 1.65 V to 5.5 V V
CC
Operation
Unbuffered for Crystal Oscillator and Analog Applications
LVCMOS Compatible
Source/Sink
±16
mA @ 4.5 V V
CC
Near Zero Static Supply Current Substantially Reduces System
Power Requirements
•
Chip Complexity: FET = 72; Equivalent Gate = 18
•
These Devices are Pb−Free and are RoHS Compliant
•
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
1
6
TSOP−6
DT SUFFIX
CASE 318G
M6
M
G
M6 M
G
G
1
IN A1
1
6
OUT Y1
= Device Code
= Date Code*
= Pb−Free Package
GND
2
5
V
CC
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
IN A2
3
4
OUT Y2
PIN ASSIGNMENT
Figure 1. Pinout
(Top View)
Pin
1
2
3
IN A1
IN A2
1
1
OUT Y1
OUT Y2
4
5
6
Function
IN A1
GND
IN A2
OUT Y2
V
CC
OUT Y1
Figure 2. Logic Symbol
FUNCTION TABLE
A Input
L
H
Y Output
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
−
Rev. 9
1
Publication Order Number:
NL27WZU04/D
NL27WZU04
MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
V
I
< GND
DC Output Diode Current
V
O
< GND
V
O
> V
CC
DC Output Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Power Dissipation in Still Air
SC−88, TSOP−6
Thermal Resistance
SC−88, TSOP−6
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature under Bias
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
Latchup Performance
Above V
CC
and Below GND at 85°C (Note 4)
Characteristics
Value
−0.5
to +7.0
−0.5
≤
V
I
≤
V
CC
−0.5
to +7.0
−50
−50
+50
±50
±100
±100
−65
to +150
200
333
260
+150
> 2000
> 200
N/A
±500
Units
V
V
V
mA
mA
I
O
I
CC
I
GND
T
STG
P
D
q
JA
T
L
T
J
V
ESD
mA
mA
mA
°C
mW
°C/W
°C
°C
V
I
Latchup
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
Supply Voltage
Operating
Data Retention Only
Input Voltage
Output Voltage (High or LOW State)
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 2.5 V
±
0.2 V
V
CC
= 3.0 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Parameter
Min
1.65
1.5
0
0
−55
0
0
0
Max
5.5
5.5
5.5
5.5
+125
20
10
5
Units
V
V
I
V
O
T
A
Dt/DV
V
V
°C
ns/V
http://onsemi.com
2
NL27WZU04
DC ELECTRICAL CHARACTERISTICS
Symbol
V
IH
V
IL
V
OH
Parameter
High−Level Input Voltage
Low−Level Input Voltage
High−Level Output
Voltage
V
IN
= V
IL
V
IN
= GND
I
OH
=
−100
mA
Condition
V
CC
(V)
1.65 to 1.85
2.3 to 5.5
1.65 to 1.85
2.3 to 5.5
1.65 to 5.5
V
CC
−0.1
T
A
= 25°C
Min
0.85 V
CC
0.8 V
CC
0.15 V
CC
0.2 V
CC
V
CC
−0.1
Typ
Max
−55°C
3
T
A
3
125°C
Min
0.85 V
CC
0.8 V
CC
0.15 V
CC
0.2 V
CC
V
V
Max
Units
V
I
OH
=
−3
mA
I
OH
=
−4
mA
I
OH
=
−6
mA
I
OH
=
−8
mA
I
OH
=
−12
mA
I
OH
=
−16
mA
1.65
2.3
2.7
3.0
3.0
4.5
1.65 to 5.5
1.29
1.9
2.2
2.4
2.3
3.8
1.52
2.1
2.3
2.6
2.5
4.2
0.1
1.29
1.9
2.2
2.4
2.3
3.8
0.1
V
V
OL
Low−Level Output
Voltage
V
IN
= V
IH
V
IN
= V
CC
I
OL
= 100
mA
IOL = 3 mA
I
OL
= 4 mA
I
OL
= 6 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
1.65
2.3
2.7
3.0
3.0
4.5
0 to 5.5
0
5.5
0.08
0.12
0.20
0.24
0.26
0.31
0.24
0.3
0.4
0.4
0.55
0.55
±0.1
1
1.0
0.24
0.3
0.4
0.4
0.55
0.55
±1.0
10
10
mA
mA
mA
I
IN
I
OFF
I
CC
Input Leakage Current
Power Off Leakage
Current
Maximum Quiescent
Supply Current
V
IN
= 5.5 V or GND
V
IN
= 5.5 V or
V
OUT
= 5.5 V
V
IN
= 5.5 V or GND
Î Î Î ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
Î
Î
Î Î Î Î Î ÎÎÎÎ
Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î Î Î ÎÎ
Î Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î Î Î ÎÎ Î Î
Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎÎÎ Î
Î ÎÎ Î Î
Î
Î
Î Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ Î Î
Î Î ÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
T
A
= 25°C
Typ
5.5
3.3
2.7
4.0
2.2
3.4
*55°C
3
T
A
3
125°C
Min
1.5
1.2
0.8
1.2
0.5
0.8
Max
11.0
6.3
4.5
7.0
3.6
6.2
Symbol
t
PLH
t
PHL
Parameter
Condition
V
CC
(V)
Min
1.5
1.2
0.8
1.2
0.5
0.8
Max
1.8
5.7
4.1
6.4
3.3
5.6
Units
ns
Propagation Delay
Input A to Y
(Figure 3 and 4)
R
L
= 1 MW, C
L
= 50 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 1 MW, C
L
= 15 pF
1.8
±
0.15
2.5
±
0.2
3.3
±
0.3
R
L
= 500
W,
C
L
= 50 pF
R
L
= 500
W,
C
L
= 50 pF
5.0
±
0.5
AC ELECTRICAL CHARACTERISTICS
t
R
= t
F
= 2.5 ns; C
L
= 50 pF; R
L
= 500
W
CAPACITIVE CHARACTERISTICS
Symbol
C
IN
Input Capacitance
Parameter
Condition
Typical
7
8
25
Units
pF
pF
pF
V
CC
= 5.5 V, V
I
= 0 V or V
CC
V
CC
= 5.5 V, V
I
= 0 V or V
CC
C
OUT
C
PD
Output Capacitance
Power Dissipation Capacitance (Note 5)
10 MHz, V
CC
= 5.5 V, V
I
= 0 V or V
CC
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD

V
CC

f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD

V
CC2

f
in
+ I
CC

V
CC
.
http://onsemi.com
3
NL27WZU04
A or B
V
CC
50%
t
PLH
t
PHL
GND
Y
50% V
CC
PROPAGATION DELAYS
t
R
= t
F
= 2.5 ns, 10% to 90%; f = 1 MHz; t
W
= 500 ns
Figure 3. Switching Waveforms
V
CC
PULSE
GENERATOR
R
T
DUT
C
L
R
L
C
L
= 50 pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 500
W
or equivalent
R
T
= Z
OUT
of pulse generator (typically 50
W)
Figure 4. Test Circuit
ORDERING INFORMATION
Device
NL27WZU04DFT2G
NLV27WZU04DFT2G*
NL27WZU04DTT1G
Package
SC−88 / SOT−363 / SC−70
(Pb−Free)
SC−88 / SOT−363 / SC−70
(Pb−Free)
TSOP−6
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
http://onsemi.com
4
NL27WZU04
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
D
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
DIM
A
A1
A3
b
C
D
E
e
L
H
E
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
6
5
4
H
E
1
2
3
−E−
b
6 PL
0.2 (0.008)
M
E
M
A3
C
A
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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NL27WZU04DFT4 Related Products

NL27WZU04DFT4 NL27WZU04DTT3
Description DUAL 1-INPUT INVERT GATE, PDSO6, SC-70, SC-88, SOT-363, 6 PIN DUAL 1-INPUT INVERT GATE, PDSO6, SC-59, SOT-23, TSOP-6
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker ON Semiconductor ON Semiconductor
Parts packaging code SOT-363 TSOP
package instruction SC-70, SC-88, SOT-363, 6 PIN SC-59, SOT-23, TSOP-6
Contacts 6 6
Reach Compliance Code unknown unknown
JESD-30 code R-PDSO-G6 R-PDSO-G6
JESD-609 code e0 e0
length 2 mm 3 mm
Load capacitance (CL) 50 pF 50 pF
Logic integrated circuit type INVERTER INVERTER
MaximumI(ol) 0.006 A 0.006 A
Number of functions 2 2
Number of entries 1 1
Number of terminals 6 6
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSSOP TSOP
Encapsulate equivalent code TSSOP6,.08 TSOP6,.11,37
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE
method of packing TAPE AND REEL TAPE AND REEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V
Prop。Delay @ Nom-Sup 7 ns 7 ns
propagation delay (tpd) 7 ns 7 ns
Certification status Not Qualified Not Qualified
Schmitt trigger NO NO
Maximum seat height 1.1 mm 1.1 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal pitch 0.65 mm 0.95 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
width 1.25 mm 1.5 mm

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