BT137B-800G datasheet, PDF - EEWORLD Datasheet

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BT137B-800G: Description4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS, TO-263AB, PLASTIC, D2PAK-3/2; CategoryAnalog mixed-signal IC Trigger device; File Size277KB，14 Pages; ManufacturerWeEn Semiconductors; Environmental Compliance

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BT137B-800G Overview

4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS, TO-263AB, PLASTIC, D2PAK-3/2

BT137B-800G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	WeEn Semiconductors
package instruction	D2PAK-3/2
Reach Compliance Code	not_compliant
Other features	SENSITIVE GATE
Shell connection	MAIN TERMINAL 2
Configuration	SINGLE
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	8 A
Guideline	IEC-60134
Off-state repetitive peak voltage	800 V
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	4 QUADRANT LOGIC LEVEL TRIAC

BT137B-800G Preview

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset

Management Co. Ltd established Bipolar Power joint venture (JV),

WeEn Semiconductors,

which

will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown

below.

WWW

- For www.nxp.com use

www.ween-semi.com

- For salesaddresses@nxp.com use

salesaddresses@ween-semi.com

For the copyright notice at the bottom of each page (or elsewhere in the document, depending

on the version) “

NXP Semiconductors N.V.

{year}.

becomes “

WeEn

Semiconductors Co., Ltd.

{year}.

If you have any questions related to this document, please contact our nearest sales office via e-

mail or phone (details via

salesaddresses@ween-semi.com).

Thank you for your cooperation and understanding,

WeEn Semiconductors

BT137B-800G

4Q Triac

12 June 2014

Product data sheet

1. General description

Planar passivated four quadrant triac in a SOT404 (D2PAK) surface-mountable plastic

package intended for use in bidirectional switching and phase control applications.

2. Features and benefits

•

High blocking voltage capability

Least sensitive gate for highest noise immunity

Planar passivated for voltage ruggedness and reliability

Surface-mountable package

Triggering in all four quadrants

3. Applications

•

General purpose motor control

General purpose switching

4. Quick reference data

Table 1.

Symbol

DRM

TSM

T(RMS)

Quick reference data

Parameter

repetitive peak off-

state voltage

non-repetitive peak on- full sine wave; T

j(init)

= 25 °C;

state current

= 20 ms;

Fig. 4; Fig. 5

RMS on-state current

full sine wave; T

≤ 102 °C;

Fig. 1;

Fig. 2; Fig. 3

Static characteristics

gate trigger current

= 12 V; I

= 0.1 A; T2+ G+;

= 25 °C;

Fig. 7

= 12 V; I

= 0.1 A; T2+ G-;

= 25 °C;

Fig. 7

= 12 V; I

= 0.1 A; T2- G-;

= 25 °C;

Fig. 7

= 12 V; I

= 0.1 A; T2- G+;

= 25 °C;

Fig. 7

100

Conditions

Min

Typ

Max

800

Unit

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NXP Semiconductors

BT137B-800G

4Q Triac

5. Pinning information

Table 2.

Pinning information

Symbol Description

main terminal 1

main terminal 2

gate

mounting base; main

terminal 2

Simplified outline

Graphic symbol

sym051

D2PAK (SOT404)

6. Ordering information

Table 3.

Ordering information

Package

Name

BT137B-800G

D2PAK

Description

Version

plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404

(one lead cropped)

Type number

BT137B-800G

All information provided in this document is subject to legal disclaimers.

Product data sheet

12 June 2014

2 / 13

NXP Semiconductors

BT137B-800G

4Q Triac

7. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

DRM

T(RMS)

TSM

Parameter

repetitive peak off-state voltage

RMS on-state current

non-repetitive peak on-state

current

full sine wave; T

≤ 102 °C;

Fig. 1;

Fig. 2; Fig. 3

full sine wave; T

j(init)

= 25 °C;

= 20 ms;

Fig. 4; Fig. 5

full sine wave; T

j(init)

= 25 °C;

= 16.7 ms

I t

/dt

Conditions

Min

Max

800

0.5

150

125

Unit

I t for fusing

rate of rise of on-state current

= 10 ms; SIN

= 12 A; I

= 0.2 A; dI

/dt = 0.2 A/µs;

T2+ G+

= 12 A; I

= 0.2 A; dI

/dt = 0.2 A/µs;

T2+ G-

= 12 A; I

= 0.2 A; dI

/dt = 0.2 A/µs;

T2- G-

= 12 A; I

= 0.2 A; dI

/dt = 0.2 A/µs;

T2- G+

A s

A/µs

°C

G(AV)

stg

peak gate current

peak gate power

average gate power

storage temperature

junction temperature

over any 20 ms period

-40

BT137B-800G

All information provided in this document is subject to legal disclaimers.

Product data sheet

12 June 2014

3 / 13

NXP Semiconductors

BT137B-800G

4Q Triac

T(RMS)

(A)

003aae689

T(RMS)

(A)

003aae692

- 50

100

(°C)

150

10- 2

10- 1

surge duration (s)

Fig. 1.

RMS on-state current as a function of mounting

base temperature; maximum values

Fig. 2.

f = 50 Hz

≤ 102 °C

RMS on-state current as a function of surge

duration; maximum values

003aae690

tot

(W)

conduction

form

angle

factor

(degrees)

2.8

2.2

120

1.9

180

1.57

α = 180°

120°

90°

60°

30°

T(RMS)

(A)

α = conduction angle

a = form factor = I

T(RMS)

T(AV)

Fig. 3.

Total power dissipation as a function of RMS on-state current; maximum values

BT137B-800G

All information provided in this document is subject to legal disclaimers.

Product data sheet

12 June 2014

4 / 13

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