DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC556; BC557
PNP general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Oct 11
NXP Semiconductors
Product data sheet
PNP general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC546 and BC547.
PINNING
PIN
1
2
3
emitter
base
collector
BC556; BC557
DESCRIPTION
1
handbook, halfpage
2
3
3
2
1
MAM281
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC556
BC557
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BC556
BC557
V
CEO
collector-emitter voltage
BC556
BC557
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−65
−45
−5
−100
−200
−200
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−80
−50
V
V
MIN.
MAX.
UNIT
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
2004 Oct 11
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
BC556
BC557
BC556A
BC556B; BC557B
BC557C
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
F
Notes
1. V
BEsat
decreases by about
−1.7
mV/K with increasing temperature.
2. V
BE
decreases by about
−2
mV/K with increasing temperature.
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA; note 1
I
C
=
−100
mA; I
B
=
−5
mA; note 1
V
CE
=
−5
V; I
C
=
−2
mA; note 2
V
CE
=
−5
V; I
C
=
−10
mA; note 2
V
CB
=
−10
V; I
E
= i
e
= 0 A; f = 1 MHz
V
EB
=
−0.5
V; I
C
= i
c
= 0 A; f = 1 MHz
V
CE
=
−5
V; I
C
=
−200 μA;
R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
CONDITIONS
V
CB
=
−30
V; I
E
= 0 A
V
CB
=
−30
V; I
E
= 0 A; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 V
I
C
=
−2
mA; V
CE
=
−5
V;
see Figs 2, 3 and 4
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BC556; BC557
VALUE
250
UNIT
K/W
MIN.
−
−
−
125
125
125
220
420
−
−
−
−
−600
−
−
−
−
TYP.
−1
−
−
−
−
−
−
−
−60
−180
−750
−930
−650
−
3
10
−
2
MAX. UNIT
−15
−4
−100
475
800
250
475
800
−300
−650
−
−
−750
−820
−
−
−
10
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
nA
μA
nA
V
CE
=
−5
V; I
C
=
−10
mA; f = 100 MHz 100
2004 Oct 11
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC556; BC557
handbook, full pagewidth
300
MBH726
hFE
200
VCE =
−5
V
100
0
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC556A.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
400
MBH727
hFE
VCE =
−5
V
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC556B; BC557B.
Fig.3 DC current gain; typical values.
2004 Oct 11
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC556; BC557
handbook, full pagewidth
600
MBH728
hFE
500
VCE =
−5
V
400
300
200
100
0
−10
−2
BC557C.
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
Fig.4 DC current gain; typical values.
2004 Oct 11
5
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