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2N3055W

Description
Power Bipolar Transistor, 15A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerBaneasa SA
Download Datasheet Parametric View All

2N3055W Overview

Power Bipolar Transistor, 15A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

2N3055W Parametric

Parameter NameAttribute value
MakerBaneasa SA
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)0.8 MHz
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