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BFQ236

Description
TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size67KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BFQ236 Overview

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal

BFQ236 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.3 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1400 MHz

BFQ236 Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ236; BFQ236A
NPN video transistors
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors
Product specification
NPN video transistors
FEATURES
High breakdown voltages
Low output capacitance
High gain bandwidth
Good thermal stability
Gold metallization ensures
excellent reliability
Surface mounting.
APPLICATIONS
CRT amplifier buffer/driver in
high-resolution colour graphics
monitors.
DESCRIPTION
NPN video transistor in a SOT223
plastic package. PNP complements:
BFQ256 and BFQ256A.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
page
BFQ236; BFQ236A
4
1
Top view
2
3
MSB002 - 1
Fig.1
Simplified outline
(SOT223).
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ236
BFQ236A
V
CER
collector-emitter voltage
BFQ236
BFQ236A
I
C
P
tot
h
FE
f
T
collector current (DC)
total power dissipation
DC current gain
transition frequency
BFQ236
BFQ236A
Note
1. T
s
is the temperature at the soldering point of the collector lead.
T
s
115
°C;
note 1
I
C
= 50 mA; V
CE
= 10 V; see Fig.4
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
1
0.8
1.4
1.2
GHz
GHz
R
BE
= 100
20
35
95
110
300
2
V
V
mA
W
open emitter
100
115
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BFQ236
BFQ236A
V
CEO
collector-emitter voltage
BFQ236
BFQ236A
V
CER
collector-emitter voltage
BFQ236
BFQ236A
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector lead.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Notes
1. T
s
is the temperature at the soldering point of the collector lead.
PARAMETER
thermal resistance from junction to soldering point
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
115
°C;
note 1; see Fig.3
open collector
R
BE
= 100
open base
CONDITIONS
open emitter
BFQ236; BFQ236A
MIN.
−65
MAX.
100
115
65
95
95
110
3
300
2
+150
175
V
V
V
V
V
V
V
UNIT
mA
W
°C
°C
CONDITIONS
T
s
= 115
°C;
P
tot
= 2 W;
notes 1 and 2
VALUE
30
UNIT
K/W
2. Device mounted on a printed-circuit board measuring 40
×
40
×
1 mm (collector pad 35
×
17 mm).
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
BFQ236
BFQ236A
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 10 mA; I
B
= 0
BFQ236
BFQ236A
V
(BR)CER
collector-emitter breakdown voltage I
C
= 1 mA; R
BE
= 100
BFQ236
BFQ236A
I
CES
I
CBO
h
FE
C
c
C
cb
f
T
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector capacitance
collector-base capacitance
transition frequency
BFQ236
BFQ236A
I
B
= 0; V
CE
= 50 V
I
E
= 0; V
CB
= 50 V
I
C
= 50 mA; V
CE
= 10 V;
see Fig.4
I
E
= i
e
= 0; V
CB
= 10 V;
f = 1 MHz
I
C
= i
c
= 0; V
CB
= 10 V;
f = 1 MHz; see Fig.6
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz; see Fig.5
PARAMETER
collector-base breakdown voltage
CONDITIONS
I
C
= 100
µA;
I
E
= 0
BFQ236; BFQ236A
MIN.
100
115
65
95
95
110
20
TYP.
35
1.8
1.5
MAX.
100
20
UNIT
V
V
V
V
V
V
µA
µA
pF
pF
1
0.8
1.4
1.2
GHz
GHz
MRA604
400
handbook, halfpage
IC
(mA)
300
handbook, halfpage
3
MRA600
Ptot
(W)
2
200
1
100
BFQ236
0
0
40
80
VCER (V)
R
BE
100
Ω.
BFQ236A
0
120
0
50
100
150
200
Ts (
o
C)
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
4
Philips Semiconductors
Product specification
NPN video transistors
BFQ236; BFQ236A
MBB434
MBC969
handbook, halfpage
50
2.0
handbook, halfpage
fT
(GHz)
hFE
40
1.5
BFQ236A
30
1.0
BFQ236
20
0
100
200
IC (mA)
300
0.5
0
50
100
IC (mA)
150
V
CE
= 10 V.
V
CE
= 10 V; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
5
MRA602
Ccb
(pF)
4
3
2
1
0
0
5
10
15
20
25
30
35
VCB (V)
I
C
= 0; f = 1 MHz.
Fig.6
Collector-base capacitance as a function of
collector-base voltage; typical values.
1997 Oct 02
5

BFQ236 Related Products

BFQ236 BFQ236A
Description TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal
Maker NXP NXP
package instruction SMALL OUTLINE, R-PSSO-G4 SMALL OUTLINE, R-PSSO-G4
Contacts 4 4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.3 A 0.3 A
Collector-based maximum capacity 1.5 pF 1.5 pF
Collector-emitter maximum voltage 65 V 95 V
Configuration SINGLE SINGLE
JESD-30 code R-PSSO-G4 R-PSSO-G4
Number of components 1 1
Number of terminals 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 1400 MHz 1200 MHz
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