BFQ236-T datasheet, PDF - EEWORLD Datasheet

BFQ236-T: DescriptionTRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size149KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BFQ236-T Overview

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	0.3 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
JESD-30 code	R-PSSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1400 MHz

	BFQ236-T	BFQ236A-T
Description	TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal	TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PSSO-G4	SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.3 A	0.3 A
Collector-based maximum capacity	1.5 pF	1.5 pF
Collector-emitter maximum voltage	65 V	95 V
Configuration	SINGLE	SINGLE
JESD-30 code	R-PSSO-G4	R-PSSO-G4
Number of components	1	1
Number of terminals	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1400 MHz	1200 MHz

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