IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT169D
SCR
19 March 2014
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92)
plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic
ICs and other low power gate trigger circuits.
2. Features and benefits
•
•
•
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Direct triggering from low power gate circuits and logic ICs
3. Applications
•
•
•
•
Ignition circuits
Lighting ballasts
Protection circuits
Switched Mode Power Supplies
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
I
T(AV)
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
average on-state
current
RMS on-state current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
-
50
200
µA
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
400
400
8
0.5
0.8
Unit
V
V
A
A
A
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TO
-92
NXP Semiconductors
BT169D
SCR
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A
G
K
anode
gate
cathode
321
Simplified outline
Graphic symbol
A
G
sym037
K
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT169D
BT169D/01
BT169D/DG
TO-92
TO-92
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
SOT54
SOT54
Type number
7. Marking
Table 4.
BT169D
BT169D/01
BT169D/DG
Marking codes
Marking code
BT169DH
BT169D
BT169DH
Type number
BT169D
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© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
19 March 2014
2 / 13
NXP Semiconductors
BT169D
SCR
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
0.8
P
tot
(W)
0.6
2.8
0.4
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.1
0.2
0.3
0.4
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
α
101
2.2
a = 1.57
1.9
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
400
400
0.5
0.8
8
9
0.32
50
1
5
2
0.1
150
125
001aab446
Unit
V
V
A
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/
µs
A s
A/µs
A
V
W
W
°C
°C
77
T
lead(max)
(°C)
89
over any 20 ms period
-
-40
-
0.2
113
0
I
T(AV)
(A)
125
0.6
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
BT169D
Total power dissipation as a function of average on-state current; maximum values
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
19 March 2014
3 / 13
NXP Semiconductors
BT169D
SCR
2
I
T(RMS)
(A)
1.5
001aab449
1
I
T(RMS)
(A)
0.8
83 °C
001aab450
0.6
1
0.4
0.5
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
= 83 °C
Fig. 2.
RMS on-state current as a function of surge
duration for sinusoidal currents
10
I
TSM
(A)
8
Fig. 3.
RMS on-state current as a function of lead
temperature; maximum values
001aab499
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT169D
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
19 March 2014
4 / 13
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