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LF412MJ/883

Description
DUAL OP-AMP, 3000uV OFFSET-MAX, 4MHz BAND WIDTH, CDIP8, DIP-8
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size2MB,15 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Download Datasheet Parametric View All

LF412MJ/883 Overview

DUAL OP-AMP, 3000uV OFFSET-MAX, 4MHz BAND WIDTH, CDIP8, DIP-8

LF412MJ/883 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRochester Electronics
Parts packaging codeDIP
package instructionDIP-8
Contacts8
Reach Compliance Codeunknown
Amplifier typeOPERATIONAL AMPLIFIER
Maximum average bias current (IIB)0.0002 µA
Nominal Common Mode Rejection Ratio100 dB
Maximum input offset voltage3000 µV
JESD-30 codeR-GDIP-T8
JESD-609 codee0
Humidity sensitivity level1
Negative supply voltage upper limit-18 V
Nominal Negative Supply Voltage (Vsup)-15 V
Number of functions2
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Filter levelMIL-STD-883
Maximum seat height5.08 mm
Nominal slew rate15 V/us
Supply voltage upper limit18 V
Nominal supply voltage (Vsup)15 V
surface mountNO
technologyBIPOLAR
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
total doseMIL-STD-883 V
Nominal Uniform Gain Bandwidth4000 kHz
width7.62 mm

LF412MJ/883 Preview

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LF412 Low Offset, Low Drift Dual JFET Input Operational Amplifier
January 28, 2010
LF412
Low Offset, Low Drift Dual JFET Input Operational
Amplifier
General Description
These devices are low cost, high speed, JFET input opera-
tional amplifiers with very low input offset voltage and guar-
anteed input offset voltage drift. They require low supply
current yet maintain a large gain bandwidth product and fast
slew rate. In addition, well matched high voltage JFET input
devices provide very low input bias and offset currents. The
LF412 dual is pin compatible with the LM1558, allowing de-
signers to immediately upgrade the overall performance of
existing designs.
These amplifiers may be used in applications such as high
speed integrators, fast D/A converters, sample and hold cir-
cuits and many other circuits requiring low input offset voltage
and drift, low input bias current, high input impedance, high
slew rate and wide bandwidth.
Features
Internally trimmed offset voltage: 1 mV (max)
Input offset voltage drift: 10
μV/°C
(max)
Low input bias current: 50 pA
Low input noise current:
Wide gain bandwidth: 3 MHz (min)
High slew rate: 10V/μs (min)
Low supply current: 1.8 mA/Amplifier
High input impedance: 10
12
Ω
Low total harmonic distortion
0.02%
Low 1/f noise corner: 50 Hz
Fast settling time to 0.01%: 2
μs
Typical Connection
Connection Diagrams
Metal Can Package
565642
565641
Ordering Information
X
Y
LF412XYZ
indicates electrical grade
indicates temperature range
“M”
for military
“C”
for commercial
indicates package type
“H”
or “N”
Order Number LF412MH, LF412CH
See NS Package Number H08A
or LF412MH/883
(Note
1)
See NS Package Number H08C
Dual-In-Line Package
Z
565644
Order Number LF412ACN, LF412CN
or LF412MJ/883
(Note
1)
See NS Package Number J08A or N08E
BI-FET II™ is a trademark of National Semiconductor Corporation.
© 2010 National Semiconductor Corporation
5656
www.national.com
LF412
Simplified Schematic
1/2 Dual
565643
Note 1:
Available per JM38510/11905
Detailed Schematic
565632
www.national.com
2
LF412
Absolute Maximum Ratings
(Note
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(Note
11)
Supply Voltage
Differential Input Voltage
Input voltage Range
 (Note
3)
Output Short Circuit
Duration (Note
4)
LF412A
±22V
±38V
±19V
Continuous
LF412
±18V
±30V
±15V
Continuous
H Package
Power Dissipation
 (Note
12)
T
j
max
(Note
5)
150°C
152°C/W
N Package
670 mW
115°C
115°C/W
θ
jA
(Typical)
Operating Temp. Range
(Note
6)
(Note
6)
Storage Temp.
−65°C
T
A
150° −65°C
T
A
150°
C
C
Range
Lead Temp.
(Soldering, 10 sec.)
260°C
260°C
ESD Tolerance
1700V
1700V
 (Note
13)
DC Electrical Characteristics
(Note
7)
Symbol
V
OS
ΔV
OS
/ΔT
I
OS
Parameter
Input Offset Voltage
Average TC of Input
Offset Voltage
Input Offset Current
V
S
=±15V
(Note
7, Note 9)
I
B
Input Bias Current
V
S
=±15V
(Note
7, Note 9)
R
IN
A
VOL
Input Resistance
Large Signal Voltage
Gain
V
O
V
CM
CMRR
PSRR
I
S
Output Voltage Swing
Input Common-Mode
Voltage Range
Common-Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Supply Current
(Note
10)
V
O
= 0V, R
L
=
80
100
3.6
5.6
70
100
3.6
6.5
dB
mA
R
S
10k
80
T
j
=25°C
V
S
=±15V, V
O
=±10V,
R
L
=2k, T
A
=25°C
Over Temperature
V
S
=±15V, R
L
=10k
25
±12
±16
200
±13.5
+19.5
−16.5
100
70
15
±12
±11
200
±13.5
+14.5
−11.5
100
V/mV
V
V
V
dB
50
T
j
=25°C
T
j
=70°C
T
j
=125°C
T
j
=25°C
T
j
=70°C
T
j
=125°C
10
12
200
25
50
25
100
2
25
200
4
50
10
12
200
50
25
100
2
25
200
4
50
pA
nA
nA
pA
nA
nA
Ω
V/mV
Conditions
Min
R
S
=10 kΩ, T
A
=25°C
R
S
=10 kΩ
(Note
8)
LF412A
Typ
0.5
7
Max
1.0
10
Min
LF412
Typ
1.0
7
Max
3.0
20
mV
μV/°C
Units
Note 2:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device
is functional, but do not guarantee specific performance limits.
AC Electrical Characteristics
(Note
7)
Symbol
Parameter
Amplifier to Amplifier
Coupling
SR
GBW
Slew Rate
Gain-Bandwidth Product
Conditions
Min
T
A
=25°C, f=1 Hz-20 kHz
(Input Referred)
V
S
=±15V, T
A
=25°C
V
S
=±15V, T
A
=25°C
10
3
15
4
8
2.7
15
4
V/μs
MHz
LF412A
Typ
−120
Max
Min
LF412
Typ
−120
Max
dB
Units
3
www.national.com
LF412
Symbol
THD
Parameter
Total Harmonic Dist
Conditions
Min
A
V
=+10, R
L
=10k,
V
O
=20 Vp-p,
BW=20 Hz-20 kHz
T
A
=25°C, R
S
=100Ω,
f=1 kHz
T
A
=25°C, f=1 kHz
LF412A
Typ
Max
Min
LF412
Typ
Max
Units
%
0.02
0.02
e
n
i
n
Equivalent Input Noise
Voltage
Equivalent Input Noise
Current
25
0.01
25
0.01
Note 3:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4:
Any of the amplifier outputs can be shorted to ground indefintely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5:
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Note 6:
These devices are available in both the commercial temperature range 0°C
T
A
70°C and the military temperature range −55°C
T
A
125°C. The
temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an
“M” indicates the military temperature range. The military temperature range is available in “H” package only. In all cases the maximum operating temperature is
limited by internal junction temperature T
j
max.
Note 7:
Unless otherwise specified, the specifications apply over the full temperature range and for V
S
=±20V for the LF412A and for V
S
=±15V for the LF412.
V
OS
, I
B
, and I
OS
are measured at V
CM
=0.
Note 8:
The LF412A is 100% tested to this specification. The LF412 is sample tested on a per amplifier basis to insure at least 85% of the amplifiers meet this
specification.
Note 9:
The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature, T
j
. Due to limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
D
. T
j
=T
A
jA
P
D
where
θ
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 10:
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice.
V
S
= ±6V to ±15V.
Note 11:
Refer to RETS412X for LF412MH and LF412MJ military specifications.
Note 12:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
outside guaranteed limits.
Note 13:
Human body model, 1.5 kΩ in series with 100 pF.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
565610
565611
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4
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