RS3A thru RS3K
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Fast Switching Rectifier
DO-214AB (SMC)
Cathode Band
Reverse Voltage
50 to 800V
Forward Current
3.0A
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.126 MIN.
(3.20 MIN.)
0.060 MIN.
(1.52 MIN.)
0.280 (7.11)
0.260 (6.60)
Dimensions in inches
and (millimeters)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008
(0.203)
Max.
0.320 REF
Mechanical Data
Case:
JEDEC DO-214AB molded plastic over glass
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.007 oz., 0.25 g
Packaging codes/options:
9/3.5K per 13" Reel (16mm Tape)
7/850 EA per 7" Reel (16mm Tape)
Parameters
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=75°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=75°C
Typical thermal resistance
(1)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile surface mount package
• Built-in strain relief
• Fast switching for high efficiency
• Easy pick and place
• Glass passivated chip junction
• High temperature soldering: 250°C/10 seconds at terminals
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
ΘJA
R
ΘJL
T
J
, T
STG
RS3A
RA
50
35
50
RS3B
RB
100
70
100
RS3D
RD
200
140
200
3.0
100
50
15
-55 to +150
RS3G
RG
400
280
400
RS3J
RJ
600
420
600
RS3K
RK
800
500
800
V
V
V
A
A
°C/W
°C
Units
Operating junction and storage temperature range
Electrical Characteristics
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 2.5A
T
A
=25°C
T
A
=125°C
V
F
I
R
t
rr
C
J
1.3
10
250
150
44
250
34
500
V
µA
ns
pF
Typical junction capacitance at 4.0V, 1MHz
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.3 x 0.3” (8.0 x 8.0mm) copper pad area
Document Number 88709
19-Apr-04
www.vishay.com
1
RS3A thru RS3K
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
3.0
Resistive or Inductive Load
150
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
T
L
= 75°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Peak Forward Surge Current (A)
Average Forward Current (A)
2.5
2.0
125
100
75
50
25
0
1.0
0
0
P
.C.B. Mounted
0.3 x 0.3" (8.0 x 8.0 mm)
Copper Pad Areas
50
100
150
200
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
100
100
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
T
J
= 125°C
10
Instantaneous Forward Current (A)
T
J
= 125°C
10
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
1
T
J
= - 40°C
T
J
= 75°C
1
T
J
= 25°C
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
100
100
Fig. 6 – Typical Transient Thermal
Impedance
Transient Thermal Impedance (°CW)
Mounted on
0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
10
Junction Capacitance (pF)
RS3A-RS3G
RS3J-RS3K
10
1
1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
t, Pulse Duration, sec
Document Number 88709
19-Apr-04
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