SGB30N60 datasheet, PDF - EEWORLD Datasheet

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SGB30N60: Description41A, 600V, N-CHANNEL IGBT, TO-263AB, GREEN, PLASTIC, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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SGB30N60 Overview

41A, 600V, N-CHANNEL IGBT, TO-263AB, GREEN, PLASTIC, D2PAK-3

SGB30N60 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	D2PAK
package instruction	GREEN, PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	unknown
Other features	LOW CONDUCTION LOSS
Shell connection	COLLECTOR
Maximum collector current (IC)	41 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	391 ns
Nominal on time (ton)	78 ns

SGB30N60 Preview

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SGB30N60

Fast IGBT in NPT-technology

•

75% lower

off

compared to previous generation

combined with low conduction losses

•

Short circuit withstand time – 10

µs

•

Designed for:

- Motor controls

- Inverter

•

NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

PG-TO-263-3-2 (D²-PAK)

(TO-263AB)

•

Qualified according to JEDEC

for target applications

•

Pb-free lead plating; RoHS compliant

•

Complete product spectrum and PSpice Models :

http://www.infineon.com/igbt/

Type

SGB30N60

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

= 25°C

= 100°C

Pulsed collector current,

limited by

jmax

Turn off safe operating area

≤

600V,

≤

150°C

Gate-emitter voltage

Avalanche energy, single pulse

= 30 A,

= 50 V,

= 25

Ω

start at

= 25°C

Short circuit withstand time

= 15V,

≤

600V,

≤

150°C

Power dissipation

= 25°C

Operating junction and storage temperature

Soldering temperature (reflow soldering, MSL1)

stg

-55...+150

260

°C

tot

250

µs

±20

165

Cpuls

Symbol

112

Value

600

Unit

600V

30A

CE(sat)

2.5V

150°C

Marking

G30N60

Package

PG-TO-263-3-2

J-STD-020 and JESD-022

Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3

05.03.2009

SGB30N60

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

Electrical Characteristic,

= 25

°C,

unless otherwise specified

Parameter

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

( B R ) C E S

G E

=0 V,

=500

µA

CE(sat)

G E

= 15 V,

=30A

= 25°C

= 150

°C

Gate-emitter threshold voltage

Zero gate voltage collector current

GE(th)

CES

=700

µA,V

C E

G E

C E

= 60 0 V,V

G E

= 0 V

= 25°C

= 150

°C

Gate-emitter leakage current

Transconductance

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Internal emitter inductance

measured 5mm (0.197 in.) from case

Short circuit collector current

C(SC)

G E

=15V,t

S C

≤1

µs

C C

≤

60 0V,

≤

150

°C

300

iss

oss

rss

Gate

C E

=25V,

G E

=0 V,

f=1MHz

C C

= 48 0 V,

=30A

G E

=15V

1600

150

140

1920

180

110

182

GES

C E

=0 V,V

G E

=20V

C E

=20V,

=30A

3000

100

1.7

2.1

2.5

2.4

3.0

µA

600

Symbol

Conditions

Value

min.

Typ.

max.

Unit

thJA

thJC

0.5

K/W

Symbol

Conditions

Max. Value

Unit

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

(one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.3

05.03.2009

SGB30N60

Switching Characteristic, Inductive Load,

=25

°C

Parameter

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

d(on)

d(off)

off

= 25°C ,

C C

= 40 0 V,

=30A,

G E

= 0 /1 5 V,

= 11Ω ,

1 )

=1 80nH ,

1 )

=9 00p F

Energy losses include

“tail” and diode

reverse recovery.

291

0.64

0.65

1.29

349

0.77

0.85

1.62

Symbol

Conditions

Value

min.

typ.

max.

Unit

Switching Characteristic, Inductive Load,

=150

°C

Parameter

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

d(on)

d(off)

off

= 150

°C

C C

= 40 0 V,

=30A,

G E

= 0 /1 5 V,

= 1 1Ω ,

1 )

=1 80nH ,

1 )

=9 00p F

Energy losses include

“tail” and diode

reverse recovery.

324

0.98

0.92

1.90

389

1.18

1.19

2.38

Symbol

Conditions

Value

min.

typ.

max.

Unit

Leakage inductance

a nd Stray capacity

due to dynamic test circuit in Figure E.

Rev. 2.3

05.03.2009

SGB30N60

160A

140A

120A

100A

COLLECTOR CURRENT

100A

80A

=80°C

60A

40A

20A

10Hz

=110°C

10A

200

1ms

0.1A

10V

100V

100Hz

1kHz

10kHz

100kHz

1000V

SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

≤

150°C,

D =

0.5,

= 400V,

= 0/+15V,

= 11Ω)

COLLECTOR

EMITTER VOLTAGE

Figure 2. Safe operating area

= 25°C,

≤

150°C)

300W

60A

250W

50A

Limited by bond wire

200W

COLLECTOR CURRENT

50°C

75°C

100°C

125°C

POWER DISSIPATION

40A

150W

30A

100W

20A

tot

50W

10A

25°C

50°C

75°C

100°C

125°C

CASE TEMPERATURE

Figure 3. Power dissipation as a function

of case temperature

≤

150°C)

CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

≤

15V,

≤

150°C)

Rev. 2.3

05.03.2009

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