TLP185
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP185
Office Machine
Programmable Controllers
AC Adapter
I/O Interface Board
The TOSHIBA mini flat coupler TLP185 is a small outline coupler, suitable
for surface mount assembly.
TLP185 consist of a photo transistor optically coupled to a gallium arsenide
infrared emitting diode. Since TLP185 is smaller than DIP package, it’s
suitable for high-density surface mounting applications such as
programmable controllers
•
•
•
•
•
Collector−emitter voltage: 80V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 3750Vrms (min)
Operation Temperature:-55 to 110
˚C
Safety Standards
UL approved: UL1577, File No. E67349
cUL approved: CSA Component Acceptance Service No. 5A
File No.E67349
•
•
BSI approved:
Option (V4) type
VDE approved: EN60747-5-2, Certificate No. 40009347
(Note): When a EN60747-5-2 approved type is needed,
Please designate “Option(V4)”
Construction mechanical rating
Creepage distance
: 5.0 mm(min)
Clearance
: 5.0 mm(min)
Insulation thickness
: 0.4 mm(min)
BS EN60065:2002, Certificate No. 9020
BS EN60950-1:2006, Certificate No. 9021
TOSHIBA
11-4M1S
Unit: mm
Weight: 0.08 g (Typ.)
•
Pin Configuration(top view)
1
3
1: Anode
3: Cathode
4: Emitter
6: Collector
6
4
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TLP185
Current Transfer Ratio
Current Transfer Ratio (%)
(I
C
/ I
F
)
Type
Classification
Note1
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Min
Blank
Rank Y
Rank GR
TLP185
Rank GB
Rank YH
Rank GRL
Rank GRH
Rank BLL
50
50
100
100
75
100
150
200
Max
400
150
300
400
150
200
300
400
Blank, YE, GR, GB, Y+, G, G+, B
YE
GR
GB
Y+
G
G+
B
Marking Of Classification
(Note1): Ex Rank GB: TLP185 (GB,E
(Note) Application, type name for certification test, please use standard product type name, i, e.
TLP185(GB,E: TLP185
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TLP185
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
90°C)
LED
Pulse forward current
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
Collector power dissipation derating
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating (Ta
≥
25°C)
Isolation voltage (AC, 1min., R.H.
≤
60%)
(Note 3)
(Ta
≥
25°C)
(Note2)
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
opr
T
stg
T
sol
P
T
ΔP
T
/ °C
BV
S
Rating
50
-1.5
1
5
125
80
7
50
150
-1.5
125
−55
to 110
−55
to 125
260 (10s)
200
-2.0
3750
Unit
mA
mA / °C
A
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: Pulse width
≤
100
μs,f=100
Hz
Note 3: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions (Note)
Characteristic
Supply voltage
Forward current
Collector current
Symbol
V
CC
I
F
I
C
Min.
―
―
―
Typ.
5
16
1
Max.
48
20
10
Unit
V
mA
mA
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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TLP185
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Detector
Emitter−collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, Ta = 85°C
V = 0, f = 1 MHz
Min
1.1
—
—
80
7
—
—
—
Typ.
1.25
—
30
—
—
0.01
2
10
Max
1.4
5
—
—
—
0.08
50
—
Unit
V
μA
pF
V
V
μA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 5 mA, V
CE
= 5 V
MIn
50
Rank GB
100
—
30
—
—
—
—
Typ.
—
—
60
—
—
0.2
—
1
Max
400
400
—
—
0.3
—
0.3
10
μA
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
IF = 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
%
Collector−emitter
saturation voltage
Off−state collector current
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
V
F
= 0.7V, V
CE
= 48 V
I
C (off)
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
—
1×10
12
Typ.
0.8
10
14
Max
—
—
—
—
—
Unit
pF
Ω
V
rms
V
dc
3750
—
—
—
10000
10000
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2012-02-14
TLP185
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
Test Condition
Min
—
—
—
—
—
—
—
Typ.
5
9
9
9
2
30
70
Max
—
—
—
—
—
—
—
μs
μs
Unit
Fig. 1
Switching time test circuit
I
F
I
F
R
L
V
CC
V
CE
t
S
V
CE
V
CC
4.5V
0.5V
t
t
on
ON
t
t
off
OFF
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2012-02-14
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