MSM51V17405BSL-50TS-K datasheet, PDF

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MSM51V17405BSL-50TS-K: DescriptionEDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/24; Categorystorage storage; File Size96KB，8 Pages; ManufacturerOKI; Websitehttp://www.oki.com

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MSM51V17405BSL-50TS-K Overview

EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-26/24

MSM51V17405BSL-50TS-K Parametric

Parameter Name	Attribute value
Maker	OKI
Parts packaging code	TSOP2
package instruction	SOP,
Contacts	26
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
JESD-30 code	R-PDSO-G24
length	17.14 mm
memory density	16777216 bit
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	24
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
refresh cycle	2048
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	7.62 mm

MSM51V17405BSL-50TS-K Preview

¡ Semiconductor

MSM51V17405B/BSL

¡ Semiconductor

MSM51V17405B/BSL

E2G0073-17-41

4,194,304-Word

4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSM51V17405B/BSL is a 4,194,304-word

4-bit dynamic RAM fabricated in Oki's silicon-gate

CMOS technology. The MSM51V17405B/BSL achieves high integration, high-speed operation, and

low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/

double-layer metal CMOS process. The MSM51V17405B/BSL is available in a 26/24-pin plastic SOJ

or 26/24-pin plastic TSOP. The MSM51V17405BSL (the self-refresh version) is specially designed for

lower-power applications.

FEATURES

• 4,194,304-word

4-bit configuration

• Single 3.3 V power supply,

±0.3

V tolerance

• Input

: LVTTL compatible, low input capacitance

• Output : LVTTL compatible, 3-state

• Refresh : 2048 cycles/32 ms, 2048 cycles/128 ms (SL version)

• Fast page mode with EDO, read modify write capability

•

CAS

before

RAS

refresh, hidden refresh,

RAS-only

refresh capability

•

CAS

before

RAS

self-refresh capability (SL version)

• Multi-bit test mode capability

• Package options:

26/24-pin 300 mil plastic SOJ

(SOJ26/24-P-300-1.27)

(Product : MSM51V17405B/BSL-xxSJ)

26/24-pin 300 mil plastic TSOP

(TSOPII26/24-P-300-1.27-K) (Product : MSM51V17405B/BSL-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Family

Access Time (Max.)

RAC

CAC

OEA

Cycle Time

Power Dissipation

(Min.)

Operating (Max.) Standby (Max.)

84 ns

104 ns

124 ns

540 mW

468 mW

396 mW

1.8 mW/

0.72 mW (SL version)

MSM51V17405B/BSL-50 50 ns 25 ns 13 ns 13 ns

MSM51V17405B/BSL-60 60 ns 30 ns 15 ns 15 ns

MSM51V17405B/BSL-70 70 ns 35 ns 20 ns 20 ns

345

MSM51V17405B/BSL

¡ Semiconductor

PIN CONFIGURATION (TOP VIEW)

DQ1 2

DQ2 3

RAS

NC 6

A10 8

A0 9

A1 10

A2 11

A3 12

26 V

25 DQ4

24 DQ3

CAS

21 A9

19 A8

18 A7

17 A6

16 A5

15 A4

14 V

DQ1 2

DQ2 3

RAS

NC 6

A10 8

A0 9

A1 10

A2 11

A3 12

26 V

25 DQ4

24 DQ3

CAS

21 A9

19 A8

18 A7

17 A6

16 A5

15 A4

14 V

26/24-Pin Plastic SOJ

26/24-Pin Plastic TSOP

(K Type)

Pin Name

A0 - A10

RAS

CAS

DQ1 - DQ4

Function

Address Input

Row Address Strobe

Column Address Strobe

Data Input/Data Output

Output Enable

Write Enable

Power Supply (3.3 V)

Ground (0 V)

No Connection

Note :

The same power supply voltage must be provided to every V

pin, and the same GND

voltage level must be provided to every V

pin.

346

¡ Semiconductor

MSM51V17405B/BSL

BLOCK DIAGRAM

RAS

CAS

Timing

Generator

Timing

Generator

Column

Address

Buffers

Column

Decoders

Write

Clock

Generator

A0 - A10

Internal

Address

Counter

Output

Buffers

Refresh

Control Clock

Sense

Amplifiers

I/O

Selector

DQ1 - DQ4

Input

Buffers

Row

Address

Buffers

Row

De-

coders

Word

Drivers

Memory

Cells

On Chip

Generator

347

MSM51V17405B/BSL

¡ Semiconductor

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Voltage on Any Pin Relative to V

Short Circuit Output Current

Power Dissipation

Operating Temperature

Storage Temperature

Symbol

opr

stg

Rating

–0.5 to 4.6

0 to 70

–55 to 150

Unit

°C

*: Ta = 25°C

Recommended Operating Conditions

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

Min.

3.0

2.0

–0.3

Typ.

3.3

—

Max.

3.6

+ 0.3

0.8

(Ta = 0°C to 70°C)

Unit

Capacitance

Parameter

Input Capacitance (A0 - A10)

Input Capacitance (RAS,

CAS, WE, OE)

Output Capacitance (DQ1 - DQ4)

Symbol

IN1

IN2

I/O

Typ.

—

= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)

Max.

Unit

348

¡ Semiconductor

DC Characteristics

Parameter

Output High Voltage

Output Low Voltage

Input Leakage Current

Symbol

MSM51V17405B/BSL

= 3.3 V ±0.3 V, Ta = 0°C to 70°C)

Condition

MSM51V17405 MSM51V17405 MSM51V17405

B/BSL-50

B/BSL-60

B/BSL-70 Unit Note

Min.

= –2.0 mA

= 2.0 mA

0 V

+ 0.3 V;

All other pins not

under test = 0 V

DQ disable

0 V

RAS, CAS

cycling,

= Min.

RAS, CAS

= V

CC2

RAS, CAS

≥

–0.2 V

RAS

cycling,

CC3

CAS

= V

= Min.

RAS

= V

CC5

CAS

= V

DQ = enable

CC6

RAS

cycling,

CAS

before

RAS

= V

CC7

CAS

cycling,

HPC

= Min.

= 62.5

ms,

CC10

CAS

before

RAS,

RAS

0.2 V,

CAS

0.2 V

—

300

—

300

—

300

1, 4,

—

150

—

130

—

110

1, 3

—

150

—

130

—

110

1, 2

—

150

—

130

—

110

1, 2

–10

2.4

Max.

0.4

Min.

2.4

Max.

0.4

Min.

2.4

Max.

0.4

Output Leakage Current

Average Power

Supply Current

(Operating)

Power Supply

Current (Standby)

Average Power

Supply Current

(RAS-only Refresh)

Power Supply

Current (Standby)

Average Power

Supply Current

(CAS before

RAS

Refresh)

Average Power

Supply Current

(Fast Page Mode)

Average Power

Supply Current

(Battery Backup)

Average Power

Supply Current

(CAS before

RAS

Self-Refresh)

–10

CC1

—

150

0.5

200

—

130

0.5

200

—

110

0.5

200

1, 2

1, 5

CCS

—

300

—

300

—

300

1, 5

Notes : 1.

Max. is specified as I

for output open condition.

The address can be changed once or less while

RAS

= V

The address can be changed once or less while

CAS

= V

– 0.2 V

+ 0.3 V, –0.3 V

0.2 V.

SL version.

349

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