K4S641632N-LL600 datasheet, PDF

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K4S641632N-LL600: DescriptionSynchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54; Categorystorage storage; File Size358KB，15 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4S641632N-LL600 Overview

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54

K4S641632N-LL600 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
length	22.22 mm
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	54
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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K4S640832N

K4S641632N

Synchronous DRAM

64Mb N-die SDRAM Specification

54 TSOP-II

with Lead-Free and Halogen-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-

WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-

OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT

GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

1 of 15

Rev. 1.12 August 2008

K4S640832N

K4S641632N

Synchronous DRAM

Table of Contents

1.0 Features ........................................................................................................................................ 4

2.0 General Description ..................................................................................................................... 4

3.0 Ordering Information ................................................................................................................... 4

4.0 Package Physical Dimension ...................................................................................................... 5

5.0 Functional Block Diagram............................................................................................................ 6

6.0 Pin Configuration (Top view) ....................................................................................................... 7

7.0 Input/Output Function Description ............................................................................................. 7

8.0 Absolute Maximum Ratings ........................................................................................................ 8

9.0 DC Operating Conditions ............................................................................................................. 8

10.0 Capacitance................................................................................................................................. 8

11.0 DC Characteristics ..................................................................................................................... 9

12.0 AC Operating Test Conditions................................................................................................. 11

13.0 Operating AC Parameter .......................................................................................................... 11

14.0 AC Characteristics.................................................................................................................... 12

15.0 DQ Buffer Output Drive Characteristics ................................................................................. 12

16.0 IBIS Specification...................................................................................................................... 13

17.0 Simplified Truth Table .............................................................................................................. 15

2 of 15

Rev. 1.12 August 2008

K4S641632N-LL600 Related Products

	K4S641632N-LL600	K4S641632N-LC750	K4S641632N-LL750	K4S641632N-LC500	K4S640832N-LL750	K4S641632N-LC600	K4S641632N-LL500	K4S640832N-LC750
Description	Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 8MX8, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 8MX8, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Contacts	54	54	54	54	54	54	54	54
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5 ns	5.4 ns	5.4 ns	4.5 ns	5.4 ns	5 ns	4.5 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz	133 MHz	133 MHz	200 MHz	133 MHz	166 MHz	200 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	8	8	16	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	54	54	54	54	54	54	54	54
word count	4194304 words	4194304 words	4194304 words	8388608 words	8388608 words	4194304 words	8388608 words	8388608 words
character code	4000000	4000000	4000000	8000000	8000000	4000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX16	4MX16	4MX16	8MX8	8MX8	4MX16	8MX8	8MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	4096
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.12 mA	0.13 mA	0.13 mA	0.13 mA	0.11 mA	0.12 mA	0.13 mA	0.11 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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