BC546 / 547 / 548
Vishay Semiconductors
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors
• These transistors are subdivided into three groups
A, B, and C according to their current gain. The
type BC546 is available in groups A and B, how-
ever, the types BC547 and BC548 can be supplied
in all three groups. As complementary types the
PNP transistors BC556...BC558 are recom-
mended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
C 1
2
B
1
18855_1
2
3
E 3
Mechanical Data
Case:
TO-92 Plastic case
Weight:
approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part
BC546A
BC546B
BC547A
BC547B
BC547C
BC548A
BC548B
BC548C
Ordering code
BC546A-BULK or BC546A-TAP
BC546B-BULK or BC546B-TAP
BC547A-BULK or BC547A-TAP
BC547B-BULK or BC547B-TAP
BC547C-BULK or BC547C-TAP
BC548A-BULK or BC548A-TAP
BC548B-BULK or BC548B-TAP
BC548C-BULK or BC548C-TAP
Remarks
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Bulk / Ammopack
Document Number 85113
Rev. 1.2, 02-Nov-04
www.vishay.com
1
BC546 / 547 / 548
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - base voltage
Test condition
Part
BC546
BC547
BC548
Collector - emitter voltage
BC546
BC547
BC548
BC546
BC547
BC548
Emitter - base voltage
BC546
BC547
BC548
Collector current
Collector peak current
Peak base current
Peak emitter current
Power dissipation
1)
VISHAY
Symbol
V
CBO
V
CBO
V
CBO
V
CES
V
CES
V
CES
V
CEO
V
CEO
V
CEO
V
EBO
V
EBO
V
EBO
I
C
I
CM
I
BM
- I
EM
Value
80
50
30
80
50
30
65
45
30
6
6
5
100
200
200
200
500
1)
Unit
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
T
amb
= 25 °C
P
tot
Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
Rθ
JA
T
j
T
S
Value
250
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Electrical DC Characteristics
Parameter
Small signal current gain
(current gain group A)
Small signal current gain
(current gain group B)
Small signal current gain
(current gain group C)
Input impedance
(current gain group A)
Input impedance
(current gain group B)
Input impedance
(current gain group C)
Output admittance
(current gain group A)
Output admittance
(current gain group B)
Output admittance
(current gain group C)
Test condition
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
Part
Symbol
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
1.6
3.2
6
Min
Typ
220
330
600
2.7
4.5
8.7
18
30
60
4.5
8.5
15
30
60
110
kΩ
kΩ
kΩ
µS
µS
µS
Max
Unit
www.vishay.com
2
Document Number 85113
Rev. 1.2, 02-Nov-04
VISHAY
Parameter
Reverse voltage transfer ratio
(current gain group A)
Reverse voltage transfer ratio
(current gain group B)
Reverse voltage transfer ratio
(current gain group C)
DC current gain
(current gain group A)
DC current gain
(current gain group B)
DC current gain
(current gain group C)
DC current gain
(current gain group A)
DC current gain
(current gain group B)
DC current gain
(current gain group C)
DC current gain
(current gain group A)
DC current gain
(current gain group B)
DC current gain
(current gain group C)
Collector saturation voltage
Base saturation voltage
Base - emitter voltage
Collector-emitter cut-off current
Test condition
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 100 mA
V
CE
= 5 V, I
C
= 100 mA
V
CE
= 5 V, I
C
= 100 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 80 V
V
CE
= 50 V
V
CE
= 30 V
V
CE
= 80 V, T
j
= 125 °C
V
CE
= 50 V, T
j
= 125 °C
V
CE
= 30 V, T
j
= 125 °C
BC546
BC547
BC548
BC546
BC547
BC548
Part
Symbol
h
re
h
re
h
re
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
I
CES
I
CES
I
CES
I
CES
I
CES
I
CES
BC546 / 547 / 548
Vishay Semiconductors
Min
Typ
1.5 x 10
-4
2 x 10
-4
3 x 10
-4
90
150
270
110
200
420
180
290
500
120
200
400
80
200
700
900
580
660
0.2
0.2
0.2
700
720
15
15
15
4
4
4
200
600
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
220
450
800
Max
Unit
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Emitter - base capacitance
Noise figure
Test condition
V
CE
= 5 V, I
C
= 10 mA,
f = 100 MHz
V
CB
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 200
µA,
R
G
= 2 kΩ, f = 1 kHz,
∆f
= 200 Hz
BC546
Part
Symbol
f
T
C
CBO
C
EBO
F
Min
Typ
300
3.5
9
2
10
6
Max
Unit
MHz
pF
pF
dB
BC547
BC548
F
F
2
1.2
10
4
dB
dB
Document Number 85113
Rev. 1.2, 02-Nov-04
www.vishay.com
3
BC546 / 547 / 548
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
P
tot
- Admissible Power Dissipation ( mW )
VISHAY
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (
°C
)
I
CBO
- Collector-Base Cutoff Current ( nA )
10000
maximum
1000
100
typical
10
1
0.1
0
Test voltage V
CBO
:
equal to the given
maximum value V
CES
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (° C )
18865
18826
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Collector-Base Cutoff Current vs. Ambient Temperature
1000
T
amb
= 100
°
C
25
°
C
- 50° C
I
C
- Collector Current ( mA )
h
FE
- DC Current Gain
100
V
CE
= 5 V
100
10
T
amb
= 100° C
10
V
CE
= 5 V
- 50° C
1
25° C
0.1
0
0.2
0.4
0.6
0.8
1
1
0.01
18824
0.1
1
10
I
C
- Collector Current ( mA )
100
18827
V
BE
- Base-Emitter Voltage ( V )
Figure 2. DC Current Gain vs. Collector Current
Figure 5. Collector Current vs. Base-Emitter Voltage
r
thA
- Pulse Thermal Resistance (
°
C / W)
10
3
C
CBO
/ C
EBO
- Collector / Emitter
10
Base Capacitance ( pF )
10
2
10
0.2
0.1
0.05
0.02
0.01
0.005
t
p
8
6
C
EBO
C
CBO
4
1
½
= 0
½
= t
p
/T
T
10
-4
10
-2
1
t
p
- Pulse Length ( s )
P
I
10
2
2
0
0.1
T
amb
= 25
°
C
1
10
V
CBO
, V
EBO
- Reverse Bias Voltage ( V )
10
-1
10
-6
18866
18828
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Collector-Base Capacitance, Emitter-Base Capacitance
vs. Bias Voltage
www.vishay.com
4
Document Number 85113
Rev. 1.2, 02-Nov-04
VISHAY
BC546 / 547 / 548
Vishay Semiconductors
V
CEsat
- Collector Saturation Voltage ( V )
0.5
0.4
I
C
/ I
B
= 20
0.3
0.2
T
amb
= 100° C
25° C
- 50° C
1
10
I
C
- Collector Current ( mA )
100
0.1
0
0.1
18829
Figure 7. Collector Saturation Voltage vs. Collector Current
100
h
e
( I
C
) / h
e
( I
C
= 2 mA )
10
h
ie
V
CE
= 5 V
T
amb
= 25
°
C
h
re
1
h
fe
h
oe
0.1
0.1
1
I
C
- Collector Current ( mA )
10
18830
Figure 8. Relative h-Parameters vs. Collector Current
1000
f
T
- Gain-Bandwidth Product ( MHz )
T
amb
= 25
°
C
V
CE
= 10 V
5V
100
2V
10
0.1
18831
10
1
I
C
- Collector Current ( mA )
100
Figure 9. Gain-Bandwidth Product vs. Collector Current
Document Number 85113
Rev. 1.2, 02-Nov-04
www.vishay.com
5
京公网安备 11010802033920号
EEWORLD
