CBR8M-L020LEADFREE datasheet, PDF

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CBR8M-L020LEADFREE: DescriptionBridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, CASE DM, 4 PIN; CategoryDiscrete semiconductor diode; File Size474KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CBR8M-L020LEADFREE Overview

Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, CASE DM, 4 PIN

CBR8M-L020LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	R-PSFM-W4
Contacts	4
Manufacturer packaging code	CASE DM
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-W4
JESD-609 code	e3
Maximum non-repetitive peak forward current	300 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10

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CBR8M-L010 SERIES

w w w. c e n t r a l s e m i . c o m

SILICON BRIDGE RECTIFIERS

8.0 AMP, 100 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR8M-L010 series

types are silicon, single phase, full wave bridge rectifiers

designed for general purpose, high current applications.

MARKING: FULL PART NUMBER

CASE DM

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL -L010

Peak Repetitive Reverse Voltage

VRRM

100

DC Blocking Voltage

100

RMS Reverse Voltage

Average Forward Current (TC=100°C)

Peak Forward Surge Current

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

VR(RMS)

IFSM

TJ, Tstg

-L020

200

140

CBR8M

-L040 -L060

400

600

400

280

8.0

200

-65 to +150

3.0

600

420

-L080

800

560

-L100

1000

700

UNITS

°C

°C/W

CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

MAX

VR=Rated VRRM

IF=8.0A

1.1

UNITS

μA

R3 (11-October 2013)

CBR8M-L020LEADFREE Related Products

	CBR8M-L020LEADFREE	CBR8M-L040LEADFREE	CBR8M-L080LEADFREE	CBR8M-L060LEADFREE	CBR8M-L010LEADFREE	CBR8M-L100LEADFREE
Description	Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, CASE DM, 4 PIN	Bridge Rectifier Diode, 1 Phase, 8A, 400V V(RRM), Silicon, CASE DM, 4 PIN	Bridge Rectifier Diode, 1 Phase, 8A, 800V V(RRM), Silicon, CASE DM, 4 PIN	Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon, CASE DM, 4 PIN	Bridge Rectifier Diode, 1 Phase, 8A, 100V V(RRM), Silicon, CASE DM, 4 PIN	Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon, CASE DM, 4 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4
Contacts	4	4	4	4	4	4
Manufacturer packaging code	CASE DM	CASE DM	CASE DM	CASE DM	CASE DM	CASE DM
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4
JESD-609 code	e3	e3	e3	e3	e3	e3
Maximum non-repetitive peak forward current	300 A	300 A	300 A	300 A	300 A	300 A
Number of components	4	4	4	4	4	4
Phase	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	8 A	8 A	8 A	8 A	8 A	8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	400 V	800 V	600 V	100 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10
Maker	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor

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