DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-800-1C
ABDB-800-1C
FEATURES
MECHANICAL SPECIFICATION
ACTUAL SIZE
DT
DB804
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
SURGE OVERLOAD RATING TO 300 AMPS PEAK
SERIES DB800-DB810 and ADB804-ADB808
BH
AC
UL RECOGNIZED - FILE #E124962
MECHANICAL DATA
Case: Molded plastic, U/L Flammability Rating 94V-0
Terminals: Round silver plated copper pins
AC
_
LL
+
LD
D1
+
Soldering: Per MIL-STD 202 Method 208 guaranteed
D1
Polarity: Marked on side of case; positive lead at beleveled corner
_
Mounting Position: Any. Through hole provided for #6 screw
Weight: 0.18 Ounces (5.4 Grams)
BL
BL
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Ratingsat25°Cambienttemperature unlessotherwisespecified.
Single phase, half wave,60Hz, resistive or inductive load.
Forcapacitive loads, derate currentby20%.
RATINGS
PARAMETER (TEST CONDITIONS)
Series Number
Maximum DC Blocking Voltage
Working Peak Reverse Voltage
Maximum Peak Recurrent Reverse Voltage
RMS Reverse Voltage
Power Dissipation in V
(BR)
Region for 100
µ
S Square Wave
Continuous Power Dissipation in V
(BR)
Region
@ T
HS
=80
o
C (Heat Sink Temp)
Thermal Energy (Rating for Fusing)
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method). T
J
= 150
O
C
@ T
C
= 50
o
C (Note 1)
Average Forward Rectified Current
@T
A
= 50
o
C (Note 2)
Junction Operating and Storage Temperature Range
Minimum Avalanche Voltage
Maximum Avalanche Voltage
Maximum Forward Voltage (Per Diode) at 4 Amps DC
Maximum Reverse Current at Rated V
RM
@ T
A
= 25 C
@T
A
= 100
o
C
o
SYMBOL
CONTROLLED
AVALANCHE
ADB ADB ADB DB
804 806 808 800
NON-CONTROLLED
AVALANCHE
DB DB DB
801 802 804
DB
806
DB DB
808 810
UNITS
V
RM
V
RWM
V
RRM
V
R (RMS)
P
RM
P
R
I
2
t
I
FSM
I
O
T
J
, T
STG
V
(BR) Min
V
(BR) Max
V
FM
I
RM
V
ISO
R
θJA
R
θJC
450
650
850
280
420 560
400
2
64
300
10
8
-55 to +150
n/a
n/a
0.95 (Typ. 0.90)
5
1
2000
12
5
35
70
140
280
n/a
420
560
700
400
600 800
50
100
200
400
600
800 1000
VOLTS
WATTS
n/a
AMPS
2
SEC
AMPS
°C
900 1100 1300
VOLTS
µA
mA
VOLTS
o
Minimum Insulation Breakdown Voltage (Circuit to Case)
Typical Thermal Resistance
Junction to Ambient (Note 2)
Junction to Case (Note 1)
C/W
3.01 08db
NOTES: (1) Bridge mounted on 4.9" x 4.3" x 0.11" thick (12.4cm x 10.8cm x 0.3cm) aluminum plate
(2) Bridge mounted on PC Board with 0.5" sq. (12mm sq.) copper pads and bridge lead length of 0.375" (9.5mm)
(3) Bolt bridge on heat sink, using silicon thermal compound between bridge and mounting surface, for maximum heat transfer.
E31
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. BRDB-800-2C
ABDB-800-2C
8 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES DB800 - DB810 and SERIES ADB804 - ADB808
300
60Hz Resistive or Inductive Loads
NOTE 1
Case
250
200
Ambient
150
NOTE 2
100
50
1
10
100
Temperature,
o
C
FIGURE 1. FORWARD CURRENT DERATING CURVE
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
100
50
10
10
T
J
= 100
o
C
1.0
1.0
NOTE 3
0.1
0.1
T
J
= 25
o
C
0.01
0.01
0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
400
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
NOTE 4
100
NOTES
(1) Case Temperature, T
C,
With Bridge Mounted on
4.9" x 4.3" x 0.11" Thick (12.4cm x 10.8cm x 0.3cm)
Aluminum Plate
Ambient Temperature, T
A,
With Bridge Mounted on
PC Board With 0.5" Sq. (12mm Sq.) Copper Pads
And Bridge Lead Length of 0.375" (9.5mm)
10
1
10
100
(2) T
J
= 150
o
C
(3) T
J
= 25 C; Pulse Width = 300
µ
Sec; 1% Duty Cycle
o
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
(4) T
J
= 25
o
C; f = 1 MHz; Vsig = 50mVp-p
3.01 08db
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