Z0103DA datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Analog mixed-signal IC> Trigger device> Z0103DA

Z0103DA: Description400V, 0.8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92; CategoryAnalog mixed-signal IC Trigger device; File Size108KB，7 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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Z0103DA Overview

400V, 0.8A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92

Z0103DA Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	STMicroelectronics
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	not_compliant
Other features	SENSITIVE GATE
Configuration	SINGLE
Maximum DC gate trigger current	3 mA
Maximum DC gate trigger voltage	1.5 V
Maximum holding current	7 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Maximum leakage current	0.01 mA
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	400 V
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	4 QUADRANT LOGIC LEVEL TRIAC

Z0103DA Preview

Z01 Series

1A TRIAC

STANDARD

MAIN FEATURES:

Symbol

T(RMS)

DRM

RRM

GT (Q

)

Value

600 to 800

3 to 25

Unit

DESCRIPTION

The Z01 series is suitable for general purpose AC

switching applications. They can be found in

applications

such

home

appliances

(electrovalve, pump, door lock, small lamp

control), fan speed controllers,...

Different gate current sensitivities are available,

allowing optimized performances when controlled

directly from microcontrollers.

G A2

TO-92

(Z01xxA)

SOT-223

(Z01xxN)

ABSOLUTE MAXIMUM RATINGS

Symbol

T(RMS)

Parameter

RMS on-state current (full sine wave)

SOT-223

TO-92

TSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

t Value for fusing

Critical rate of rise of on-state current

= 2 x I

, tr

≤

100 ns

Peak gate current

Average gate power dissipation

Storage junction temperature range

Operating junction temperature range

F = 50 Hz

F = 60 Hz

Ttab = 90°C

TI = 50°C

t = 20 ms

t = 16.7 ms

8.5

0.35

Tj = 125°C

0.1

- 40 to + 150

- 40 to + 125

A/µs

°C

Value

Unit

dI/dt

G(AV)

stg

tp = 10 ms

F = 120 Hz

tp = 20 µs

July 2003 - Ed: 5

1/7

Z01 Series

ELECTRICAL CHARACTERISTICS

(Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

(1)

= 12 V

(2)

dV/dt (2)

(dV/dt)c (2)

= V

DRM

= 50 mA

= 1.2 I

I - III - IV

= 67 %V

DRM

gate open Tj = 110°C

(dI/dt)c = 0.44 A/ms

Tj = 110°C

MIN.

= 3.3 kΩ Tj = 125°C

= 30

Ω

I - II - III

ALL

MAX.

MIN.

MAX.

0.5

Z01xx

1.3

0.2

100

V/µs

Unit

STATIC CHARACTERISTICS

Symbol

(2)

DRM

RRM

Note 1:

minimum IGT is guaranted at 5% of IGT max.

Note 2:

for both polarities of A2 referenced to A1

Test Conditions

= 1.4 A

tp = 380 µs

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

MAX.

Value

1.6

0.95

400

0.5

Unit

mΩ

µA

Threshold voltage

Dynamic resistance

DRM

= V

RRM

THERMAL RESISTANCES

Symbol

th(j-t)

th(j-l)

th(j-a)

Junction to tab (AC)

Junction to lead (AC)

Junction to ambient

S = 5 cm

Parameter

SOT-223

TO-92

SOT-223

TO-92

S = Copper surface under tab

Value

150

Unit

°C/W

2/7

Z01 Series

PRODUCT SELECTOR

Part Number

600 V

Z0103MA

Z0103MN

Z0103SA

Z0103SN

Z0103NA

Z0103NN

Z0107MA

Z0107MN

Z0107SA

Z0107SN

Z0107NA

Z0107NN

Z0109MA

Z0109MN

Z0109SA

Z0109SN

Z0109NA

Z0109NN

Z0110MA

Z0110MN

Z0110SA

Z0110SN

Z0110NA

Z0110NN

Voltage

700 V

800 V

3 mA

5 mA

10 mA

25 mA

Standard

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

TO-92

SOT-223

Sensitivity

Type

Package

ORDERING INFORMATION

TRIAC

SERIES

CURRENT: 1A

01 03

M A

VOLTAGE:

M: 600V

S: 700V

N: 800V

Blank

1AA2

PACKING MODE:

1AA2: TO-92 bulk (preferred)

2AL2: TO-92 ammopack

5AA4: SOT-223 Tape & reel

PACKAGE:

A: TO-92

N: SOT-223

SENSITIVITY:

03: 3mA

07: 5mA

09: 10mA

10: 25mA

3/7

Z01 Series

OTHER INFORMATION

Part Number

Z01xxyA 1AA2

Z01xxyA 2AL2

Z0103yN 5AA4

Z0107yN 5AA4

Z0109yN 5AA4

Z0110yN 5AA4

Note:

xx = sensitivity, y = voltage

Marking

Z01xxyA

Z3y

Z7y

Z9y

Z0y

Weight

0.2 g

0.12 g

Base

quantity

2500

2000

1000

Packing

mode

Bulk

Ammopack

Tape & reel

Fig. 1:

Maximum power dissipation versus RMS

on-state current (full cycle).

P(W)

1.50

1.25

1.00

0.75

0.50

0.25

Fig. 2-1:

RMS on-state current versus ambient

temperature (full cycle).

IT(RMS)(A)

1.2

1.0

0.8

0.6

0.4

0.2

TO-92

(Rth(j-a=Rth(j-l))

SOT-223

(Rth(j-a)=Rth(j-t))

IT(RMS)(A)

0.0

Tl or Ttab (°C)

100

125

0.00

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Fig. 2-2:

RMS on-state current versus ambient

temperature (full cycle).

IT(RMS)(A)

1.2

1.0

0.8

0.6

0.4

0.2

0.0

TO-92

Rth(j-a)=150°C/W

SOT-223

(Rth(j-a)=60°C/W)

Fig. 3:

Relative variation of thermal impedance

junction to ambient versus pulse duration.

K=[Zth(j-a)/Rth(j-a)]

1.00

Z01xxxA

0.10

Z01xxxN

Tamb(°C)

100

125

0.01

1E-3

1E-2

1E-1

tp(s)

1E+0

1E+1

1E+2 5E+2

4/7

Z01 Series

Fig. 4:

Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values).

IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]

2.5

2.0

1.5

IH & IL

IGT

Fig. 5:

Surge peak on-state current versus

number of cycles.

ITSM(A)

t=20ms

Non repetitive

Tj initial=25°C

One cycle

1.0

0.5

Tj(°C)

0.0

-40

-20

100

120

140

Repetitive

Tamb=25°C

Number of cycles

100

1000

Fig. 6:

Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10ms, and corresponding value of I²t.

ITSM (A), I²t (A²s)

100.0

dI/dt limitation:

20A/µs

ITSM

Fig. 7:

values).

On-state

characteristics

(maximum

ITM(A)

10.0

Tj initial=25°C

10.0

Tj=Tj max.

1.0

I²t

Tj=25°C

tp (ms)

0.1

0.01

0.10

1.00

10.00

VTM(V)

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Tj max.

Vto= 0.95 V

Rd= 420 mΩ

Fig. 8:

Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical

values).

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1

Fig. 9:

Relative variation of critical rate of

decrease of main current versus junction

temperature.

(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

Z0103

Z0107

Z0109

Z0110

100.0

(dV/dt)c (V/µs)

Tj (°C)

100

125

1.0

10.0

5/7

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