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PMBD354

Description
Mixer Diode
CategoryDiscrete semiconductor    diode   
File Size256KB,8 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

PMBD354 Overview

Mixer Diode

PMBD354 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys DescriptionPMBD354, Schottky Diode, 0.03A max, 4V Dual, 3-Pin, TO-236AB
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandULTRA HIGH FREQUENCY
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature100 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
GuidelineIEC-60134
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30

PMBD354 Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD354
Schottky barrier double diode
Product data sheet
Supersedes data of 2002 Aug 06
2003 Mar 25
NXP Semiconductors
Product data sheet
Schottky barrier double diode
FEATURES
Low forward voltage
Small SMD package
Low capacitance
Matched capacitance.
APPLICATIONS
UHF mixer
Sampling circuits
Modulators
Phase detection.
DESCRIPTION
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
MARKING
TYPE NUMBER
PMBD354
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
−65
4
30
+150
100
PARAMETER
MIN.
MARKING
CODE
(1)
*V8
1
Top view
handbook, 2 columns
PMBD354
PINNING
PIN
1
2
3
cathode k
1
anode a
2
common connection a
1
, k
2
DESCRIPTION
3
handbook, 2 columns
3
2
MGC487
1
2
MGC421
Fig.1
Simplified outline (SOT23) pin configuration and symbol.
MAX.
UNIT
V
mA
°C
°C
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Schottky barrier double diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.2
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
R
C
d
ΔC
d
Note
1. Pulse test: t
p
= 300
μs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
reverse current
diode capacitance
capacitance matching
V
R
= 3 V; note 1; see Fig.3
f = 1 MHz; V
R
= 0; see Fig.4
f = 1 MHz; V
R
= 0
PARAMETER
CONDITIONS
PMBD354
MAX.
UNIT
350
450
600
0.25
1
0.1
mV
mV
mV
μA
pF
pF
VALUE
500
UNIT
K/W
2003 Mar 25
3
NXP Semiconductors
Product data sheet
Schottky barrier double diode
GRAPHICAL DATA
10
2
handbook, halfpage
IF
(mA)
10
MLC795
PMBD354
handbook, halfpage
10
4
MLC796
IR
(nA)
10
3
(1)
(1)
10
2
(2)
(3)
1
(2)
(3)
(4)
10
(4)
1
10
−1
10
−2
0
200
400
600
VF (mV)
800
10
1
0
1
2
V R (V)
3
(1)
(2)
(3)
(4)
T
amb
= 100
°C.
T
amb
= 60
°C.
T
amb
= 25
°C.
T
amb
=
−40 °C.
(1) T
amb
= 100
°C.
(2) T
amb
= 60
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
MLC797
handbook, halfpage
0.8
Cd
(pF)
0.7
0.6
0.5
0.4
0
1
2
3
V R (V) 4
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
4
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