2DA1971
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
Features
•
•
•
•
•
•
BV
CEO
> -400V
Max Continuous Current I
C
= -0.5A
High Gain Holds up h
FE
≥
140 @ I
C
= -100mA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT89
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Applications
•
High Voltage Switching
SOT89
C
E
B
C
C
B
Top View
Pin Out
E
Top View
Device symbol
Ordering Information
(Note 4)
Product
2DA1971-7
2DA1971-13
Notes:
Marking
1S2
1S2
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
YWW
1S2
Top View
1S2 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 1 = 2011)
WW = Week code (01 – 53)
2DA1971
Document number: DS35669 Rev: 2 – 2
1 of 7
www.diodes.com
August 2012
© Diodes Incorporated
2DA1971
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-400
-400
-7
-0.5
-1
-250
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
1.5
83
10.4
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
2DA1971
Document number: DS35669 Rev: 2 – 2
2 of 7
www.diodes.com
August 2012
© Diodes Incorporated
2DA1971
Thermal Characteristics and Derating information
1
Limit
Max Power Dissipation (W)
-I
C
Collector Current (A)
V
CE(sat)
1.5
25mmX25mm FR4
1oz Cu
1.0
100m
DC
1s
100ms
10ms
1ms
100µs
10m
Single Pulse. T =25°C
amb
25mmX25mm FR4
1oz Cu
0.5
1m
100m
1
10
100
0.0
0
20
40
60
80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
80
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
25mmX25mm FR4
1oz Cu
Max Power Dissipation (W)
100
60
D=0.5
25mmX25mm FR4
1oz Cu
40
D=0.2
Single Pulse
D=0.05
10
20
D=0.1
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
2DA1971
Document number: DS35669 Rev: 2 – 2
3 of 7
www.diodes.com
August 2012
© Diodes Incorporated
2DA1971
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 8)
Collector-Emitter saturation Voltage (Note 8)
Base-Emitter saturation Voltage (Note 8)
Base-Emitter Turn-On Current (Note 8)
Transition frequency
Collector Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
(d)
t
(r)
t
(s)
t
(f)
Min
-400
-400
-7
-
-
-
140
140
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-0.75
-
75
19
89
111
2165
185
Max
-
-
-
-100
-100
-100
450
400
-250
-400
-0.9
-0.8
-
-
-
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
ns
ns
ns
ns
Test Condition
I
C
= -100µA
I
C
= -1mA
I
E
= -100µA
V
CE
= -320V
V
CB
= -320V
V
EB
= -6V
I
C
= -20mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
I
C
= -100mA, I
B
= -10mA
I
C
= -200mA, I
B
= -40mA
I
C
= -100mA, I
B
= -10mA
I
C
= -200mA, V
CE
= -10V
I
C
= -50mA, V
CE
= -5V,
f = 50MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
V
CC
= -200V, I
C
= -100mA,
I
B1
= -10mA, I
B2
= 20mA
8. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
2DA1971
Document number: DS35669 Rev: 2 – 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
2DA1971
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
I
C
/I
B
=50
0.5
I
C
/I
B
=10
0.4
- V
CE(SAT)
(V)
- V
CE(SAT)
(V)
I
C
/I
B
=20
I
C
/I
B
=10
0.3
0.2
100°C
150°C
100m
I
C
/I
B
=5
0.1
0.0
1m
25°C
-55°C
10m
1m
10m
100m
1
10m
100m
- I
C
Collector Current (A)
- I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.0
250
150°C
100°C
V
CE
=-5V
V
CE(SAT)
v I
C
Normalised Gain
0.8
-55°C
- V
BE(SAT)
(V)
200
150
100
50
0
1m
25°C
0.6
25°C
100°C
-55°C
0.4
150°C
I
C
/I
B
=10
10m
100m
1
0.2
1m
10m
100m
- I
C
Collector Current (A)
- I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
0.8
-55°C
- V
BE(ON)
(V)
0.6
25°C
100°C
0.4
V
CE
=-5V
150°C
0.2
1m
10m
100m
- I
C
Collector Current (A)
V
BE(ON)
v I
C
2DA1971
Document number: DS35669 Rev: 2 – 2
5 of 7
www.diodes.com
August 2012
© Diodes Incorporated
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